Document
GPT14N60 / GPT14N60D
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
Robust High Voltage Termination
scheme to provide enhanced voltage-blocking capability
Avalanche Energy Specified
without degrading performance over time. In addition, this
Source-to-Drain Diode Recovery Time Comparable to a
advanced MOSFET is designed to withstand high energy in
Discrete Fast Recovery Diode
avalanche and commutation modes. The new energy
Diode is Characterized for Use in Bridge Circuits
efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed
IDSS and VDS(on) Specified at Elevated Temperature Isolated Mounting Hole Reduces Mounting Hardware
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
add.