GPT15N65 / GPT15N65D
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termi...
GPT15N65 / GPT15N65D
POWER FIELD EFFECT
TRANSISTOR
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
TO-220F
TO-3P/T-O247
Top View
Top View
FEATURES
Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode Diode is Ch...
