GPT05N70
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to ...
GPT05N70
POWER FIELD EFFECT
TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to withstand Higher Current Rating
high energy in the avalanche mode and switch efficiently. This Lower Rds(on)
new high energy device also offers a drain-to-source diode Lower Capacitances
with fast recovery time. Designed for high voltage, high speed Lower Total Gate Charge
switching applications such as power supplies, converters, Tighter VSD Specifications
power motor controls and bridge circuits.
Avalanche Energy Specified
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP Top View
TO-251 Front View
TO-252 Front View
D
GATE DRAIN SOURCE
GATE DRAIN SOURCE
G
12 3
123
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Drain to Current － Continuous － Pulsed
Rating
Gate-to-Source Voltage － Continue
Total Power Dissipation TO-251,252
TO-220
TO-220FP
Derate above 25℃
TO-251, 252
TO-220 TO-220FP
Operating and Storage Temperature Ra...
