CMS-S035-080

CMS-S035-080 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current A B Electrical Characteristics Chip size(A): 0.889 * 0.889 mm2 Bond Pad size(B) : 0.762 * 0.762 mm2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag Metalization : Cathode Ti/Ni/Ag Sym. Spec. Limit Unit Maximum Instantaneous Forward Volt at IF : 1.0Amp. 25°C VF max 0.83 Volt Minimum Instantaneous Reverse Voltage at IR : 200 uA 25°C VR min. 83 Minimum Non-repetitive Peak Surge current at 25°C IFSM 30 Storage Temperature TSTG -65 to +125 Volt. Amp °C HsinChu Headquarter 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan TEL: +886-3-567 9979 FAX: +886-3-567 9909 Sales & Marketing 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan TEL: +886-2-8692 1591 FAX: +886-2-8692 1596 2002/04/24 Rev. 1 Champion Microelectronic Corporation Page 1 ...