ATF-10136

0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features Low Noise Figure: 0.5 dB Typical at 4 GHz Low Bias: VDS = 2 V, IDS = 20 mA High Associated Gain: 13.0 dB Typical at 4 GHz High Output Power: 20.0 dBm Typical P1 dB at 4 GHz Cost Effective Ceramic Microstrip Package Tape-and Reel Packaging Option Available [1] Description The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 36 micro-X Package Electrical Specifications, TA = 25°C Symbol Parameters ...