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ATF-10100 Dataheets PDF



Part Number ATF-10100
Manufacturers HP
Logo HP
Description 0.5-12 GHz Low Noise Gallium Arsenide FET
Datasheet ATF-10100 DatasheetATF-10100 Datasheet (PDF)

0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias: VDS =2V,IDS␣ =␣ 25mA • High Associated Gain: 14.0 dB Typical at 4 GHz • High Output Power: 21.0 dBm Typical P1 dB at 4 GHz Description The ATF-10100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.

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0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias: VDS =2V,IDS␣ =␣ 25mA • High Associated Gain: 14.0 dB Typical at 4 GHz • High Output Power: 21.0 dBm Typical P1 dB at 4 GHz Description The ATF-10100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12␣ GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length interconnects between drain fingers. Total gate periphery is 500␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. Chip Outline G SD G S Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions[1] NFO Optimum Noise Figure: VCE = 2 V, IDS = 25 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz GA Gain @ NFO; VDS = 2 V, IDS.


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