Document
2–18 GHz Low Noise Gallium Arsenide FET
Technical Data
ATF-13100
Features
• Low Noise Figure: 1.1 dB Typical at 12 GHz
• High Associated Gain: 9.5 dB Typical at 12 GHz
• High Output Power: 17.5 dBm Typical P1 dB at 12 GHz
Description
The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. This device is designed for use in low noise, wideband amplifier and oscillator applications in the 2-18␣ GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
The recommended mounting procedure is to die attach at a stage temperature of 300°C using a gold-tin preform under forming gas. Assembly can be preformed with either wedge or ball bonding using 0.7 mil gold wire. See also “Chip Use” in the APPLICATIONS section.
Chip Outline
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Electrical Specifications, T.