BUT100

® BUT100 HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED s HIGH RUGGEDNESS APPLICATION s MOTOR CONTROL s UNINTERRUPTABLE POWER SUPPLY DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN Transistor in TO-3 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. 1 2 TO-3 (version " S ") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCEV VCEO VEBO IE IEM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = -1.5V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Emitter Current Emitter Peak Current Base Current Base Peak Current Total Dissipation at Tc < 25 oC Storage Temperature Max. Operating Junction Temperature February 2003 Value 200 125 7 50 150 10 30 300 -65 to 200 200 Unit V V V A A A A W oC oC 1/4 BUT100 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.58 oC/W ...