power transistors. BUT11 Datasheet


BUT11 transistors. Datasheet pdf. Equivalent


BUT11


Silicon diffused power transistors
DISCRETE SEMICONDUCTORS

DATA SHEET

BUT11; BUT11A Silicon diffused power transistors
Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13

Philips Semiconductors

Product specification

Silicon diffused power transistors
DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter
MBK106

BUT11; BUT11A

andbook, halfpage handbook, halfpage

2 1
MBB008

3

1 2 3

Fig.1 Simplified outline (TO-220AB) and symbol.

QUICK REFERENCE DATA SYMBOL VCESM BUT11 BUT11A VCEO collector-emitter voltage BUT11 BUT11A VCEsat IC ICM Ptot tf collector-emitter saturation voltage collector current (DC) collector current (peak value) total power dissipation fall time see Figs 7 and 9 see Figs 2 and 4 see Fig. 4 Tmb ≤ 25 °C; see Fig.3 resistive load; see Figs 11 and 12 open base 400 450 1.5 5 10 100 0.8 V V V A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT

THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.25 UNIT K/W

1997 Aug 13

1

Philips Semiconductors

Product specification

Silicon diffused power transistors
LIMITING VALUES In accordance with...



BUT11
DISCRETE SEMICONDUCTORS
DATA SHEET
BUT11; BUT11A
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13

BUT11
Philips Semiconductors
Silicon diffused power transistors
Product specification
BUT11; BUT11A
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a TO-220AB package.
APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems.
PINNING
PIN DESCRIPTION
1 base
2 collector; connected to
mounting base
3 emitter
andbook, halfpage
handbook, halfpage
MBK106
123
1
MBB008
2
3
Fig.1 Simplified outline (TO-220AB) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCESM
collector-emitter peak voltage
BUT11
BUT11A
VCEO
collector-emitter voltage
BUT11
BUT11A
VCEsat
IC
ICM
Ptot
tf
collector-emitter saturation voltage
collector current (DC)
collector current (peak value)
total power dissipation
fall time
CONDITIONS
VBE = 0
open base
see Figs 7 and 9
see Figs 2 and 4
see Fig. 4
Tmb 25 °C; see Fig.3
resistive load; see Figs 11 and 12
MAX.
850
1 000
400
450
1.5
5
10
100
0.8
UNIT
V
V
V
V
V
A
A
W
µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb
thermal resistance from junction to mounting base
VALUE
1.25
UNIT
K/W
1997 Aug 13
1




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