POWER TRANSISTOR. BUT11 Datasheet


BUT11 TRANSISTOR. Datasheet pdf. Equivalent


BUT11


NPN SILICON POWER TRANSISTOR
BUT11 NPN SILICON POWER TRANSISTOR
Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997

q q q

Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current
B C E
1 2 3 TO-220 PACKAGE (TOP VIEW)

Pin 2 is in electrical contact with the mounting base.
MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. SYMBOL VCBO VCES VCEO V EBO IC ICM Ptot Tj Tstg VALUE 850 850 400 10 5 10 100 -65 to +150 -65 to +150 UNIT V V V V A A W °C °C

PRODUCT

INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

1

BUT11 NPN SILICON POWER TRANSISTOR
MAY 1989 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER V CEO(sus) ICES IEBO hFE VCE(sat) V BE(sat) ft Cob Collector-emitter sus...



BUT11
Copyright © 1997, Power Innovations Limited, UK
BUT11
NPN SILICON POWER TRANSISTOR
MAY 1989 - REVISED MARCH 1997
q Rugged Triple-Diffused Planar Construction
q 100 W at 25°C Case Temperature
q 5 A Continuous Collector Current
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp 10 ms, duty cycle 2%.
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
Ptot
Tj
Tstg
VALUE
850
850
400
10
5
10
100
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
W
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

BUT11
BUT11
NPN SILICON POWER TRANSISTOR
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
VCEO(sus) sustaining voltage
IC = 0.1 A L = 25 mH
(see Note 2)
400
ICES
IEBO
Collector-emitter
cut-off current
Emitter cut-off
current
VCE = 850 V
VCE = 850 V
VEB = 10 V
VBE = 0
VBE = 0
IC = 0
TC = 125°C
50
500
1
Forward current
hFE transfer ratio
VCE = 5 V IC = 0.5 A
(see Notes 3 and 4)
20 60
Collector-emitter
VCE(sat) saturation voltage
IB = 0.6 A IC = 3 A
(see Notes 3 and 4)
1.5
Base-emitter
VBE(sat) saturation voltage
IB = 0.6 A IC = 3 A
(see Notes 3 and 4)
1.3
Current gain
ft bandwidth product VCE = 10 V IC = 0.5 A
f = 1 MHz
12
Cob Output capacitance VCB = 20 V IE = 0
f = 0.1 MHz
110
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
µA
mA
V
V
MHz
pF
thermal characteristics
RθJC
PARAMETER
Junction to case thermal resistance
MIN TYP MAX UNIT
1.25 °C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
tsv Voltage storage time IC = 3 A
tfi Current fall time
VCC = 50 V
tsv Voltage storage time IC = 3 A
tfi Current fall time
VCC = 50 V
IB(on) = 0.6A
(see Figures 1 and 2)
IB(on) = 0.6A
TC = 100°C
VBE(off) = -5 V
VBE(off) = -5 V
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1.4 µs
150 ns
1.5 µs
300 ns
PRODUCT INFORMATION
2




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)