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ATF-44101 Dataheets PDF



Part Number ATF-44101
Manufacturers HP
Logo HP
Description 2-8 GHz Medium Power Gallium Arsenide FET
Datasheet ATF-44101 DatasheetATF-44101 Datasheet (PDF)

2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features • High Output Power: 32.0␣ dBm Typical P 1dB at 4␣ ␣ GHz • High Gain at 1 dB Compression: 8.5␣ dB Typical G 1dB at 4␣ GHz • High Power Efficiency: 35% Typical at 4␣ GHz • Hermetic Metal-Ceramic Stripline Package Description The ATF-44101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range. This nominally .5␣ micron gate.

  ATF-44101   ATF-44101


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2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features • High Output Power: 32.0␣ dBm Typical P 1dB at 4␣ ␣ GHz • High Gain at 1 dB Compression: 8.5␣ dB Typical G 1dB at 4␣ GHz • High Power Efficiency: 35% Typical at 4␣ GHz • Hermetic Metal-Ceramic Stripline Package Description The ATF-44101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range. This nominally .5␣ micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between source fingers. Total gate periphery is 5 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 100 mil Flange This device is suitable for applications in space, airborne, military ground and shipboard, and commercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and mi.


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