0.5 – 6 GHz General Purpose Gallium Arsenide FET
Technical Data
ATF-21186
GAIN (dB)
211
Features
• Low Noise Figure: ...
0.5 – 6 GHz General Purpose Gallium Arsenide FET
Technical Data
ATF-21186
GAIN (dB)
211
Features
Low Noise Figure: 0.5 dB Typ. @ 2 GHz
High Output Power: 19 dBm Typ. P1dB @ 2 GHz
High MSG: 13.5 dB Typ. @ 2 GHz
Low Cost Surface Mount Plastic Package
Tape-and-Reel Packaging Option Available[1]
Note: 1. Refer to “Tape-and-Reel Packaging for
Surface Mount Semiconductors”.
30
20 MSG
10 S 21
MAG
0 0.1
1 FREQUENCY (GHz)
10
ATF-21186 Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VDS = 2 V, IDS = 15 mA.
Description
Agilent’s ATF-21186 is a low cost Gallium Arsenide
Schottky barrier-gate field effect
transistor housed in a surface mount plastic package. This general purpose device is designed for use in low noise amplifiers, gain stages, driver amplifiers, and oscillators operating over the VHF, UHF, and microwave frequency ranges. High gain with two volt operation makes this part attractive for low voltage, battery ope...
