0.5 – 10 GHz Low Noise Gallium Arsenide FET
Technical Data
ATF-25170
Features
• Low Noise Figure: 0.8 dB Typical at 4 ...
0.5 – 10 GHz Low Noise Gallium Arsenide FET
Technical Data
ATF-25170
Features
Low Noise Figure: 0.8 dB Typical at 4 GHz
High Associated Gain: 14.0 dB Typical at 4 GHz
High Output Power: 21.0 dBm Typical P1 dB at 4 GHz
Hermetic Gold-Ceramic Microstrip Package
Description
The ATF-25170 is a high performance gallium arsenide
Schottkybarrier-gate field effect
transistor
housed in a hermetic, high reliability package. Its noise figure makes this device appropriate for use in low noise amplifiers operating in the 0.5-10 GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
70 mil Package
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
NFO Optimum Noise Figure: VDS = 3 V, IDS = 20 mA
GA Gain @ NFO: VDS =3 V, IDS = 20 mA
P1 dB
G1...