ATF-25570

0.5 – 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features High Output Power: 20.5 dBm Typical P1 dB at 4 GHz Low Noise Figure: 1.0 dB Typical at 4 GHz High Associated Gain: 14.0 dB Typical at 4 GHz Hermetic Gold-Ceramic Microstrip Package Description The ATF-25570 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliabil- ity package. This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 70 mil Package Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions NFO Optimum Noise Figure: VDS = 3 V, IDS = 20 mA GA Gain @ NFO: VDS = 3 V, IDS = 20 mA ...