BUT11 SILICON TRANSISTOR Datasheet

BUT11 Datasheet, PDF, Equivalent


Part Number

BUT11

Description

NPN SILICON TRANSISTOR

Manufacture

Wing Shing Computer Components

Total Page 1 Pages
Datasheet
Download BUT11 Datasheet


BUT11
BUT11/11A
HIGH VOLTAGE POWER
SWITCHING APPLICATIONS
NPN SILICON TRANSISTOR
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta=25°c)
Characteristic
Collector-Emitter Voltage:BUT11
:BUT11A
Collector-Emitter Voltage:BUT11
:BUT11A
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Collector Dissipation (Tc=25°c)
Junction Temperature
Storage Temperature
Symbol Rating
VCES
VCEO
VEBO
IC
IC
IB
IB
PC
Tj
Tstg
850
1000
400
450
9
5
10
2
4
100
150
-65~150
Unit
V
V
V
V
V
A
A
A
A
W
°c
°c
ELECTRICAL CHARACTERISTICS (Ta=25°c)
Characterristic
Collector Emitter Sustaining Voltage :BUT11
:BUTIIA
Collector Cutoff Current
:BUT11
:BUTIIA
Emitter Cutoff Current
Collector Emitter Saturation Voltage :BUT11
:BUTIIA
Base- Emitter Saturation Voltage
:BUT11
:BUTIIA
Turn-On Time
Storage Time
Fall Time
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Symbol
Test Condition Min Typ Max
VCEO(SUS)
ICES
IEBO
VCE(sat)
VBE(sat)
ton
tstg
tf
IC=100mA,
IB=0
VCE= 850V , VEB=
0
VCE= 1000V , VEB= 0
VEB= 9V , IC=0
IC=3A,
IB=0.6A
IC=2.5A,
IB=0.5A
IC=3A,
IB=0.6A
IC=2.5A,
IB=0.5A
VCC= 250V , IC=2.5A
IB1= IB2=0.5A
400
450
1
1
10
1.5
1.5
1.3
1.3
1
4
0.8
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
Unit
V
V
mA
mA
µA
V
V
V
V
µS
µS
µS


Features BUT11/11A HIGH VOLTAGE POWER SWITCHING A PPLICATIONS NPN SILICON TRANSISTOR T O-220 ABSOLUTE MAXIMUM RATINGS (Ta=25 c) Characteristic Collector-Emitter V oltage:BUT11 :BUT11A Collector-Emitter Voltage:BUT11 :BUT11A Emitter-Base Volt age Collector Current (DC) Collector Cu rrent (Pulse) Base Current (DC) Base Cu rrent (Pulse) Collector Dissipation (Tc =25°c) Junction Temperature Storage Te mperature Symbol VCES VCEO VEBO IC IC IB IB PC Tj Tstg Rating 850 1000 400 4 50 9 5 10 2 4 100 150 -65~150 Unit V V V V V A A A A W °c °c ELECTRICAL CH ARACTERISTICS (Ta=25°c) Characterrist ic Collector Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutof f Current Collector Emitter Saturation Voltage Base- Emitter Saturation Voltag e Turn-On Time Storage Time Fall Time : BUT11 :BUTIIA :BUT11 :BUTIIA :BUT11 :BU TIIA :BUT11 :BUTIIA Symbol VCEO(SUS) I CES IEBO VCE(sat) VBE(sat) ton tstg tf Test Condition IC=100mA, IB=0 Min 400 450 Typ Max Unit V VCE= 850V , VEB= 0 VCE= 1000V , VEB= 0 VEB= .
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