POWER TRANSISTOR. BUT11A Datasheet


BUT11A TRANSISTOR. Datasheet pdf. Equivalent


BUT11A


HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
® BUT11A
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

s STMicroelectronics PREFERRED SALESTYPE
s NPN TRANSISTOR s HIGH VOLTAGE CAPABILITY s FAST SWITCHING SPEED

APPLICATIONS:
)s FLYBACK AND FORWARD SINGLE t(sTRANSISTOR LOW POWER CONVERTERS ucDESCRIPTION dThe BUT11A is a silicon Multiepitaxial Mesa NPN rotransistor in Jedec TO-220 plastic package, Pparticularly intended for switching application.

3 2 1
TO-220

bsoleteINTERNAL SCHEMATIC DIAGRAM

solete Product(s) - OABSOLUTE MAXIMUM RATINGS

ObSymbol

Parameter

Value

Unit

VCES Collector-Emitter Voltage (VBE = 0 V)

1000

V

VCEO Collector-Emitter Voltage (IB = 0)

450 V

VEBO Emitter-Base Voltage (IC = 0)

9V

IC Collector Current

5A

ICM Collector Peak Current (tp < 5 ms)

10 A

IB Base Current

2A

IBM Base Peak Current (tp < 5 ms) Ptot Total Power Dissipation at Tc ≤ 25 oC Tstg Storage Temperature
Tj Max. Operating Junction Temperature

4 83 -65 to 150 150

A
W oC oC

March 2004

1/5

BUT11A

THERMAL DATA
Rthj-case Therm...



BUT11A
® BUT11A
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s FAST SWITCHING SPEED
APPLICATIONS:
)s FLYBACK AND FORWARD SINGLE
t(sTRANSISTOR LOW POWER CONVERTERS
ucDESCRIPTION
dThe BUT11A is a silicon Multiepitaxial Mesa NPN
rotransistor in Jedec TO-220 plastic package,
Pparticularly intended for switching application.
3
2
1
TO-220
bsoleteINTERNAL SCHEMATIC DIAGRAM
solete Product(s) - OABSOLUTE MAXIMUM RATINGS
ObSymbol
Parameter
Value
Unit
VCES Collector-Emitter Voltage (VBE = 0 V)
1000
V
VCEO Collector-Emitter Voltage (IB = 0)
450 V
VEBO Emitter-Base Voltage (IC = 0)
9V
IC Collector Current
5A
ICM Collector Peak Current (tp < 5 ms)
10 A
IB Base Current
2A
IBM Base Peak Current (tp < 5 ms)
Ptot Total Power Dissipation at Tc 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
4
83
-65 to 150
150
A
W
oC
oC
March 2004
1/5

BUT11A
BUT11A
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.5
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = rated VCES
at Tc = 125oC
1 mA
2 mA
IEBO
Emitter Cut-off Current IC = 0
(IC = 0)
VBE = 9 V
10 mA
VCEO(sus)* Collector-emitter
IB (off) = 0
IC = 100 mA
450
V
Sustaining Voltage
(IB = 0)
VCE(sat)* Collector-emitter
)Saturation Voltage
IC = 2.5 A IB = 0.5 A
1.5 V
t(sVBE(sat)* Base-emitter
cSaturation Voltage
IC = 2.5 A IB = 0.5 A
1.3 V
duhFE DC Current Gain
IC = 5 mA
IC = 0.5 A
VCE = 5 V
VCE = 5 V
10 35
10 35
roRESISTIVE LOAD
Pton Turn on Time
tets Storage Time
tf Fall Time
IC = 2.5 A VCC = 250 V
IB = -IB2 = 0.5 A
Obsolete Product(s) - ObsolePulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
1 µs
4 µs
0.8 µs
2/5




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