BUT11AF POWER TRANSISTOR Datasheet

BUT11AF Datasheet, PDF, Equivalent


Part Number

BUT11AF

Description

SILICON DIFFUSED POWER TRANSISTOR

Manufacture

Wing Shing Computer Components

Total Page 1 Pages
Datasheet
Download BUT11AF Datasheet


BUT11AF
BUT11AF
SILICON DIFFUSED POWER TRANSISTOR
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
metal envelope ,primarily for use in switching power
circuits.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
Icsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0V
TO-220F
Tmb 25
IC = 2.5A; IB = 0.5A
f = 16KHz
IC=2.5A,IB1=-IB2=0.5A,VCC=150V
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
IB
IBM
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base voltage(open collector)
Collector current (DC)
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
Tmb 25
ELECTRICAL CHARACTERISTICS
SYMBOL
ICE
ICES
VCEOsust
VCEsat
VBEsat
hFE
VF
fT
Cc
ts
tf
PARAMETER
Collector-emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 1MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
CONDITIONS
VBE = 0V; VCE = VCESMmax
VBE = 0V; VCE = VCESMmax
Tj = 125
IB = 0A; IC = 100mA
L = 25mH
IC = 2.5A; IB = 0.5A
IC = 2.5A; IB = 0.5A
IC = 0.5A; VCE = 5V
IC = 0.1A; VCE = 10V
VCB = 10V
IC=2.5A,IB1=-IB2=0.5A,VCC=150V
IC=2.5A,IB1=-IB2=0.5A,VCC=150V
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
MIN MAX UNIT
1000
V
450 V
5A
10 A
40 W
1.5 V
A
V
1.0 s
MIN MAX UNIT
1000
V
450 V
5V
5A
2A
4A
40 W
-55 150
150
MIN MAX UNIT
1.0 mA
2.0 mA
V
1.5 V
1.5 V
10 50
V
5 MHz
pF
5.0 s
1.0 s


Features BUT11AF GENERAL DESCRIPTION SILICON DIF FUSED POWER TRANSISTOR Highvoltage,hig h-speed switching npn transistors in a metal envelope ,primarily for use in sw itching power circuits. QUICK REFERENC E DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN MAX 1000 450 5 10 40 1.5 UNIT V V A A W V A V s VCESM VCEO IC ICM Pto t VCEsat Icsat VF tf PARAMETER Collect or-emitter voltage peak value Collector -emitter voltage (open base) Collector current (DC) Collector current peak val ue Total power dissipation Collector-em itter saturation voltage Collector satu ration current Diode forward voltage Fa ll time Tmb 25 IC = 2.5A; IB = 0.5A f = 16KHz IC=2.5A,IB1=-IB2=0.5A,VCC=150V 1.0 LIMITING VALUES SYMBOL VCESM VCE O VEBO IC IB IBM Ptot Tstg Tj PARAMETE R Collector-emitter voltage peak value Collector-emitter voltage (open base) E mitter-base voltage(open collector) Col lector current (DC) Base current (DC) B ase current peak value Total power diss ipation Storage temperature Junction temperature CONDITIONS VB.
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