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BUT12XI Dataheets PDF



Part Number BUT12XI
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BUT12XI DatasheetBUT12XI Datasheet (PDF)

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12XI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially suited for overhead/high frequency lighting ballast applications and converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter .

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12XI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially suited for overhead/high frequency lighting ballast applications and converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Inductive fall time CONDITIONS VBE = 0 V TYP. 5 MAX. 1000 450 8 20 33 1.5 300 UNIT V V A A W V A ns Ths ≤ 25 ˚C IC = 5.0 A;IB = 0.86 A ICon = 5.0A;IBon = 1.0A,Tj ≤100˚C PINNING - SOT186A PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 1 2 3 case isolated e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 8 20 4 6 33 150 150 UNIT V V A A A A W ˚C ˚C Ths ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 55 MAX. 3.65 UNIT K/W K/W June 1997 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12XI ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 10 - pF STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsust VCEsat VBEsat hFE hFE hFEsat PARAMETER Collector cut-off current 1 CONDITIONS MIN. 450 10 14 5.8 TYP. 18 20 10 MAX. 1.0 3.0 10 1.5 1.3 35 35 12.5 UNIT mA mA mA V V V VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C Emitter cut-off current VEB = 9 V; IC = 0 A Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 5 A; IB = 0.86 A Base-emitter saturation voltage IC = 5 A; IB = 0.86 A DC current gain IC = 10 mA; VCE = 5 V IC = 1 A; VCE = 5 V IC = 5 A; VCE = 1.5 V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ton ts tf PARAMETER Switching times (resistive load) Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICon = 5.0 A; IBon = -IBoff = 1.0 A TYP. MAX. 1.0 4.0 0.8 UNIT µs µs µs µs ns ICon = 5.0 A; IBon = 1.0 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C 1.9 150 2.5 300 1 Measured with half sine-wave voltage (curve tracer). June 1997 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12XI + 50v 100-200R IC 90 % ICon 90 % 10 % Horizontal Oscilloscope Vertical 300R 30-60 Hz 6V 1R IB ts ton toff IBon 10 % tr 30ns -IBoff tf Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms with resistive load. IC / mA VCC 250 200 LC IBon 100 LB T.U.T. -VBB 0 VCE / V min VCEOsust Fig.2. Oscilloscope display for VCEOsust. Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V;LB = 1 uH VCC ICon 90 % IC RL VIM 0 tp IB RB T.U.T. ts toff IBon 10 % tf t T -IBoff t Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. Fig.6. Switching times waveforms with inductive load. June 1997 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12XI VCC VCEsat / V 1 0.9 0.8 0.7 IC/IB= 12 10 8 5 LC 0.6 0.5 IBend VCL LB T.U.T. CFB 0.4 0.3 0.2 0.1 0 0.1 1 IC / A 10 Tj = 25 C Tj = 125 C -VBB Fig.7. Test circuit RBSOA. VCC = 150 V; -VBB = 5 V LC = 200 µH; VCL ≤ 850 V; LB = 1 µH PD% Normalised Power Derating Fig.10. Typical collector-emitter saturation voltage. VCEsat = f(IC); parameter IC/IB VBEsat / V 1.2 1.1 1 0.9 0.8 0.7 0.6 IC = 6A 3A 2A Tj = 25 C Tj = 125 C 120 110 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 Tmb / C 120 140 0 0.4 0.8 1.2 IB / A 1.6 2 2.4 Fig.8. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) VBEsat / V 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.1 1 IC / A IC/IB= 8 10 12 10 Tj = 25 C Tj = 125 C Fig.11. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC VCEsat / V 10 Tj = 25 C Tj = 125 C 6A 1 4A IC=2A .


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