Document
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12XI
GENERAL DESCRIPTION
Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially suited for overhead/high frequency lighting ballast applications and converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Inductive fall time CONDITIONS VBE = 0 V TYP. 5 MAX. 1000 450 8 20 33 1.5 300 UNIT V V A A W V A ns
Ths ≤ 25 ˚C IC = 5.0 A;IB = 0.86 A ICon = 5.0A;IBon = 1.0A,Tj ≤100˚C
PINNING - SOT186A
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 8 20 4 6 33 150 150 UNIT V V A A A A W ˚C ˚C
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 55 MAX. 3.65 UNIT K/W K/W
June 1997
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12XI
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
10
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsust VCEsat VBEsat hFE hFE hFEsat PARAMETER Collector cut-off current
1
CONDITIONS
MIN. 450 10 14 5.8
TYP. 18 20 10
MAX. 1.0 3.0 10 1.5 1.3 35 35 12.5
UNIT mA mA mA V V V
VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C Emitter cut-off current VEB = 9 V; IC = 0 A Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 5 A; IB = 0.86 A Base-emitter saturation voltage IC = 5 A; IB = 0.86 A DC current gain IC = 10 mA; VCE = 5 V IC = 1 A; VCE = 5 V IC = 5 A; VCE = 1.5 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL ton ts tf PARAMETER Switching times (resistive load) Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICon = 5.0 A; IBon = -IBoff = 1.0 A TYP. MAX. 1.0 4.0 0.8 UNIT µs µs µs µs ns
ICon = 5.0 A; IBon = 1.0 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C
1.9 150
2.5 300
1 Measured with half sine-wave voltage (curve tracer).
June 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12XI
+ 50v 100-200R
IC
90 %
ICon
90 %
10 %
Horizontal Oscilloscope Vertical 300R 30-60 Hz 6V 1R
IB
ts ton toff IBon 10 % tr 30ns -IBoff
tf
Fig.1. Test circuit for VCEOsust.
Fig.4. Switching times waveforms with resistive load.
IC / mA
VCC
250 200
LC
IBon
100
LB T.U.T.
-VBB
0 VCE / V min VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V;LB = 1 uH
VCC
ICon 90 % IC
RL VIM 0 tp
IB
RB T.U.T.
ts toff IBon
10 % tf t
T
-IBoff
t
Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements.
Fig.6. Switching times waveforms with inductive load.
June 1997
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12XI
VCC
VCEsat / V 1 0.9 0.8 0.7 IC/IB= 12 10 8
5
LC
0.6 0.5
IBend
VCL LB T.U.T.
CFB
0.4 0.3 0.2 0.1 0 0.1 1 IC / A 10 Tj = 25 C Tj = 125 C
-VBB
Fig.7. Test circuit RBSOA. VCC = 150 V; -VBB = 5 V LC = 200 µH; VCL ≤ 850 V; LB = 1 µH
PD% Normalised Power Derating
Fig.10. Typical collector-emitter saturation voltage. VCEsat = f(IC); parameter IC/IB
VBEsat / V 1.2 1.1 1 0.9 0.8 0.7 0.6 IC = 6A 3A 2A Tj = 25 C Tj = 125 C
120 110 100 90 80 70 60 50 40 30 20 10 0
0
20
40
60
80 100 Tmb / C
120
140
0
0.4
0.8
1.2 IB / A
1.6
2
2.4
Fig.8. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb)
VBEsat / V 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.1 1 IC / A IC/IB= 8 10 12 10 Tj = 25 C Tj = 125 C
Fig.11. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC
VCEsat / V 10 Tj = 25 C Tj = 125 C
6A 1 4A
IC=2A
.