power transistors. BUX48A Datasheet

BUX48A transistors. Datasheet pdf. Equivalent

BUX48A Datasheet
Recommendation BUX48A Datasheet
Part BUX48A
Description High voltage fast-switching NPN power transistors
Feature BUX48A; BUX48 BUX48A High voltage fast-switching NPN power transistors Features ■ NPN transistors ■ High .
Manufacture STMicroelectronics
Datasheet
Download BUX48A Datasheet





STMicroelectronics BUX48A
BUX48
BUX48A
High voltage fast-switching NPN power transistors
Features
NPN transistors
High voltage capability
High current capability
)Fast switching speed
uct(sApplications
rodSwitching mode power supplies
Flyback and forward single transistor low power
Pconverters
leteDescription
bsoThe BUX48 and BUX48A are multi epitaxial mesa
ONPN transistors mounted in TO-3 metal can.
-They are intended for switching and industrial
Obsolete Product(s)applications for single and three-phase mains.
1
2
TO-3
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
Package
Packaging
BUX48
BUX48A
BUX48
BUX48A
TO-3
TO-3
tray
November 2007
Rev 1
1/9
www.st.com
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STMicroelectronics BUX48A
Absolute maximum ratings
1 Absolute maximum ratings
BUX48 BUX48A
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
BUX48 BUX48A
Unit
Unit
VCER Collector-emitter voltage (RBE = 10)
850 1000
V
VCES Collector-emitter voltage (VBE = 0)
850 1000
V
VCEO
)VEBO
t(sIC
cICM
duICP
roIB
PIBM
letePTOT
oTstg
bsTJ
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
Collector peak current
Collector peak current non repetitive (tp < 20 µs)
Base current
Base peak current non repetitive (tp < 20 µs)
Total dissipation at Tc = 25 °C
Storage temperature
Max. operating junction temperature
400 450
7
15
30
55
4
20
175
-65 to 200
200
- OTable 3.
t(s)Symbol
Thermal data
Parameter
Obsolete ProducRthj-case Thermal resistance junction-case
__max
Value
1
V
V
A
A
A
A
A
W
°C
°C
Unit
°C/W
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STMicroelectronics BUX48A
BUX48 BUX48A
2 Electrical characteristics
Electrical characteristics
(Tcase = 25°C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = rated VCES
VCE = rated VCES, Tc = 125°C
200 µA
2 mA
ICER
Collector cut-off current
(RBE = 10)
t(s)IEBO
Emitter cut-off current
(IC = 0)
roducVCEO(sus)(1)
Collector-emitter
sustaining voltage
(IB = 0)
lete PVEBO
Emitter-base voltage
(IC = 0)
) - ObsoVCE(sat)(1)
Collector-emitter
saturation voltage
Obsolete Product(sVBE(sat)(1)
Base-emitter saturation
voltage
VCE = rated VCER
VCE = rated VCER, Tc = 125°C
VEB = 5 V
IC = 200 mA
for BUX48
for BUX48A
400
450
IE = 50 mA
7
for BUX48
IC = 10 A
IC = 15 A
IC = 15 A
for BUX48A
IC = 8 A
IC = 12 A
for BUX48
IC = 10 A
for BUX48A
IC = 8 A
IB = 2 A
IB = 4 A
IB = 3 A
IB = 1.6 A
IB = 2.4 A
IB = 2 A
IB = 1.6 A
500 µA
4 mA
1 mA
V
V
30 V
1.5 V
3.5 V
5V
1.5 V
5V
1.6 V
1.6 V
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