POWER TRANSISTOR. BUX80 Datasheet

BUX80 TRANSISTOR. Datasheet pdf. Equivalent


Part BUX80
Description HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
Feature BUX80 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTO.
Manufacture STMicroelectronics
Datasheet
Download BUX80 Datasheet


BUX80 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s SGS-T BUX80 Datasheet
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BUX80
BUX80
HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s FAST SWITCHING SPEED
APPLICATIONS
s SWITCHING REGULATORS
s MOTOR CONTROL
s HIGH FREQUENCY AND EFFICENCY
CONVERTERS
DESCRIPTION
The BUX80 is a silicon multiepitaxial mesa NPN
transistor in Jedec TO-3 metal case, particularly
intended for converters, inverters, switching
regulators and motors control system
applications.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCER
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Parameter
Collector-emitter Voltage (VBE = 0)
Collector-emitter Voltage (RBE = 50)
Collector-emitter Voltage (IB = 0)
Emitter-base Voltage (Ic = 0)
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation at Tcase 40 oC
Storage Temperature
Max Operating Junction Temperature
June 1997
Value
800
500
400
10
10
15
5
100
-65 to 150
150
Unit
V
V
V
V
A
A
A
W
oC
oC
1/4



BUX80
BUX80
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max 1.1 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
ICES Collector Cut-off
Current (VBE = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)Collector-Emitter
SustainingVoltage
(IB = 0)
VCER(sus)Collector-Emitter
Sustaining
Voltage (RBE = 50 )
VCE(sat)Collector-Emitter
Saturation Voltage
VBE(sat)Base-Emitter
Saturation Voltage
hFEDC Current Gain
Test Conditions
VCE = 800 V
VCE = 800 V
Tcase = 125oC
VBE = 10 V
IC = 100 mA
IC = 100 mA
IC = 5 A
IC = 8 A
IC = 5 A
IC = 8 A
IC = 1.2 A
IB = 1 A
IB = 2.5 A
IB = 1 A
IB = 2.5 A
VCE = 5 V
Min.
400
500
Typ.
30
Max.
1
3
10
1.5
3
1.4
1.8
Unit
mA
mA
mA
V
V
V
V
V
V
ton Turn-on Time
IC = 5 A
VCC = 250 V
ts Storage Time
IC = 5 A
IB2 = - 2 A
tf Fall Time
IC = 5 A
IB2 = - 2 A
Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
IB1 = 1 A
IB1 = 1 A
VCC= 250 V
IB1 = 1 A
VCC= - 250 V
0.5 µs
3.5 µs
0.5 µs
2/4







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