BUX80
HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
s s s
SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPE...
BUX80
HIGH VOLTAGE
NPN SILICON POWER
TRANSISTOR
s s s
SGS-THOMSON PREFERRED SALESTYPE
NPN TRANSISTOR FAST SWITCHING SPEED
APPLICATIONS SWITCHING
REGULATORS s MOTOR CONTROL s HIGH FREQUENCY AND EFFICENCY CONVERTERS
s
1 2
TO-3
DESCRIPTION The BUX80 is a silicon multiepitaxial mesa
NPN transistor in Jedec TO-3 metal case, particularly intended for converters, inverters, switching
regulators and motors control system applications.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CER V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (R BE = 50Ω ) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (Ic = 0) Collector Current Collector Peak Current Base Current Total Power Dissipation at T case Storage Temperature Max Operating Junction Temperature ≤ 40 C
o
Value 800 500 400 10 10 15 5 100 -65 to 150 150
Unit V V V V A A A W
o o
C C
June 1997
1/4
BUX80
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1.1
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 800 V V CE = 800 V V BE = 10 V I C = 100 mA 400 T case = 125 C
o
Min.
Typ.
Max. 1 3 10
Unit mA mA mA V
V CEO(sus) ∗ Collector-Emitter SustainingVoltage (I B = 0) V CER(sus) ∗ Collector-Emitter Sustaining Voltage (R BE = 50 Ω ) V CE(sat) ∗ V BE(sat) ∗ h FE ∗ t on ts tf Collec...