BUX84F

DISCRETE SEMICONDUCTORS DATA SHEET BUX84F; BUX85F Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. APPLICATIONS Converters Inverters Switching regulators Motor control systems. PINNING PIN 1 2 3 mb DESCRIPTION base collector emitter mounting base; electrically isolated from all pins BUX84F; BUX85F 2 1 MBB008 3 1 2 3 MBK109 Fig.1 Simplified outline (SOT186) and symbol. QUICK REFERENCE DATA SYMBOL VCESM BUX84F BUX85F VCEO collector-emitter voltage BUX84F BUX85F VCEsat ICsat IC ICM Ptot tf collector-emitter saturation voltage collector saturation current collector current (DC) collector current (peak value) total power dissipation fall time Th ≤ 25 °C see Fig.4 open base − − − − − − − 0.4 400 450 1 1 2 3 18 − V V V A A A W µs PARAMETER collector-emitter peak voltage VBE = 0 − − 800 1000 V V CONDITIONS TYP. MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. ISOLATION CHARACTERISTICS SYMBOL VisolM Cisol PARAMETER isolation voltage from all terminals to external heatsink (peak value) − isolation ...