power transistors. BUX84F Datasheet

BUX84F transistors. Datasheet pdf. Equivalent


NXP BUX84F
DISCRETE SEMICONDUCTORS
DATA SHEET
BUX84F; BUX85F
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 14


BUX84F Datasheet
Recommendation BUX84F Datasheet
Part BUX84F
Description Silicon diffused power transistors
Feature BUX84F; DISCRETE SEMICONDUCTORS DATA SHEET BUX84F; BUX85F Silicon diffused power transistors Product speci.
Manufacture NXP
Datasheet
Download BUX84F Datasheet




NXP BUX84F
Philips Semiconductors
Silicon diffused power transistors
Product specification
BUX84F; BUX85F
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems.
PINNING
PIN
1
2
3
mb
DESCRIPTION
base
collector
emitter
mounting base;
electrically isolated
from all pins
2
1
MBB008
3
1 2 3 MBK109
Fig.1 Simplified outline
(SOT186) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCESM
collector-emitter peak voltage
BUX84F
BUX85F
VCEO
collector-emitter voltage
BUX84F
BUX85F
VCEsat
ICsat
IC
ICM
Ptot
tf
collector-emitter saturation voltage
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
CONDITIONS
VBE = 0
open base
see Fig.4
Th 25 °C
TYP.
MAX.
UNIT
800 V
1 000
V
400 V
450 V
1V
1A
2A
3A
18 W
0.4
µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-h
Rth j-a
thermal resistance from junction to external heatsink
thermal resistance from junction to ambient
note 1
note 2
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
VALUE
7.2
4.7
55
UNIT
K/W
K/W
K/W
ISOLATION CHARACTERISTICS
SYMBOL
PARAMETER
TYP.
VisolM
Cisol
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
12
MAX.
1 500
UNIT
V
pF
1997 Aug 14
2



NXP BUX84F
Philips Semiconductors
Silicon diffused power transistors
Product specification
BUX84F; BUX85F
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCESM
collector-emitter peak voltage
BUX84F
BUX85F
VCEO
collector-emitter voltage
BUX84F
BUX85F
IC collector current (DC)
ICM collector current (peak value)
IB base current (DC)
IBM base current (peak value)
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
CONDITIONS
VBE = 0
open base
Th 25 °C; note 1
MIN.
65
Note
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
MAX.
800
1 000
400
450
2
3
0.75
1
18
+150
150
UNIT
V
V
V
V
A
A
A
A
W
°C
°C
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCEOsust
VCEsat
VBEsat
ICES
IEBO
hFE
fT
collector-emitter sustaining voltage IC = 100 mA; IBoff = 0;
BUX84
L = 25 mH; see Figs 2 and 3
BUX85
collector-emitter saturation voltage IC = 0.3 A; IB = 30 mA;
see Fig.4
IC = 1 A; IB = 200 mA;
see Fig.4
base-emitter saturation voltage
IC = 1 A; IB = 200 mA;
see Fig.5
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
VCE = VCESmax; VBE = 0
VCE = VCESmax; VBE = 0;
Tj = 125 °C
VEB = 5 V; IC = 0
VCE = 5 V; IC = 5 A; see Fig.6
VCE = 5 V; IC = 100 mA;
see Fig.6
transition frequency
VCE = 10 V; IC = 200 mA;
f = 1 MHz
MIN.
400
450
15
20
TYP.
50
20
MAX. UNIT
V
V
0.8 V
1V
1.1 V
0.2 mA
1.5 mA
1 mA
100
MHz
1997 Aug 14
3





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