BUX87-1100

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 GENERAL DESCRIPTION High voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in the dynamic focus circuit of televisions and monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation CONDITIONS VBE = 0 V TYP. MAX. 1100 700 0.5 1 46 UNIT V V A A W Tmb ≤ 25 ˚C PINNING - TO220AB PIN 1 2 3 tab DESCRIPTION emitter collector base collector PIN CONFIGURATION tab SYMBOL c b 1 23 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current (peak value) tp = 2 ms Base current (DC) Base current (peak value) Reverse base current (peak value)1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -40 MAX. 1100 700 0.5 1 0.2 0.3 0.3 46 150 150 UNIT V V A A A A A W ˚C ˚C Tmb ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. 60 MAX. 2.7 UNIT K/W K/W 1 Turn-off current. November 1999 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diff...