Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P BUX87P
GENERAL DESCRIPTION
Hig...
Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BUX86P BUX87P
GENERAL DESCRIPTION
High voltage, high speed glass passivated
npn power
transistors in a SOT82 envelope intended for use in converters, inverters, switching
regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO VCESAT IC ICM Ptot tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector-emitter saturation voltage Collector current (DC) Collector current peak value Total power dissipation Fall time CONDITIONS VBE = 0 V IC = 0.2 A; IB = 20 mA Tmb ≤ 25 ˚C IC = 0.2 A; IB(on) = 20 mA TYP. BUX 0.28 MAX. 86P 800 400 1 0.5 1 42 87P 1000 450 V V V A A W µs UNIT
PINNING - SOT82
PIN 1 2 3 DESCRIPTION emitter collector base
PIN CONFIGURATION
SYMBOL
c b
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VEBO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (DC) Collector current (peak value) tp = 2 ms Base current (DC) Base current (peak value) Reverse base current (peak value)1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. BUX -40 MAX. 86P 800 400 87P 1000 450 5 0.5 1 0.2 0.3 0.3 42 150 150 V V V A A A A A W ˚C ˚C UNIT
Tmb ≤ 25 ˚C
1 Turn-off current.
November 19...