BUZ100SL

BUZ 100 SL SPP70N05L SIPMOS ® Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv /dt rated 175°C operating temperature also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 70 A RDS(on) 0.018 Ω Package Ordering Code BUZ 100 SL TO-220 AB Q67040-S4000-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 70 50 Pulsed drain current TC = 25 °C IDpuls 280 E AS Avalanche energy, single pulse ID = 70 A, V DD = 25 V, RGS = 25 Ω L = 155 µH, Tj = 25 °C mJ 380 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 70 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 70 17 A mJ kV/µs dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 14 170 V W Semiconductor Group 1 30/Jan/1998 BUZ 100 SL SPP70N05L Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤ 0.88 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 130 µA V GS(th) 1.2 IDSS 1.6 2 µA Zero gate...