BUZ103

BUZ 103 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175°C operating temperature also in TO-220 SMD available Pin 1 G Type BUZ 103 Pin 2 D Pin 3 S VDS 50 V ID 40 A RDS(on) 0.04 Ω Package TO-220 AB Ordering Code C67078-S1352-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 40 Unit A ID IDpuls 160 TC = 23 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 100 dv/dt 6 mJ ID = 40 A, VDD = 25 V, RGS = 25 Ω L = 63 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation VGS Ptot ± 20 120 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 ≤ 1.25 ≤ 75 E 55 / 175 / 56 °C K/W Semiconductor Group 1 07/96 BUZ 103 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 1 10 10 0.03 4 1 100 100 100 V VGS = 0 V, ID, Tj = -40 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA µA nA Ω 0.04 VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C Gate-source leakage curren...