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BUZ103SL-4 Dataheets PDF



Part Number BUZ103SL-4
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Power Transistor
Datasheet BUZ103SL-4 DatasheetBUZ103SL-4 Datasheet (PDF)

Preliminary data BUZ 103SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 103SL-4 VDS 55 V ID 4.8 A RDS(on) 0.055 Ω Package P-DSO-28 Ordering Code C67078-S. . . .- . . Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 4.8 Unit A ID IDpuls 19.2 TA = 25 °C Pulsed drain current one channel active TA = 25 °C Avalanche energy, single pulse EAS 140 dv/dt 6 mJ ID = 4.8 A, VDD = 25 V, .

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Preliminary data BUZ 103SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 103SL-4 VDS 55 V ID 4.8 A RDS(on) 0.055 Ω Package P-DSO-28 Ordering Code C67078-S. . . .- . . Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 4.8 Unit A ID IDpuls 19.2 TA = 25 °C Pulsed drain current one channel active TA = 25 °C Avalanche energy, single pulse EAS 140 dv/dt 6 mJ ID = 4.8 A, VDD = 25 V, RGS = 25 Ω L = 12 mH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 4.8 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation ,one channel active VGS Ptot ± 14 2.4 V W TA = 25 °C Operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Tj Tstg -55 ... + 175 -55 ... + 175 55 / 175 / 56 °C Semiconductor Group 1 05/Sep/1997 Preliminary data BUZ 103SL-4 Thermal Characteristics Parameter Symbol min. Thermal resistance, junction - soldering point 1) Thermal resistance, junction - ambient 2) Values typ. tbd 62.5 max. K/W Unit RthJS RthJA - 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 55 1.6 0.1 10 0.0403 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 50 µA Zero gate voltage drain current IDSS 0.1 1 100 µA VDS = 55 V, VGS = 0 V, Tj = -40 °C VDS = 55 V, VGS = 0 V, Tj = 25 °C VDS = 55 V, VGS = 0 V, Tj = 150 °C Gate-source leakage current IGSS 100 nA Ω 0.055 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 5 V, ID = 4.8 A Semiconductor Group 2 05/Sep/1997 Preliminary data BUZ 103SL-4 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs tbd 770 230 130 - S pF 960 290 165 ns 50 75 VDS≥ 2 * ID * RDS(on)max, ID = 0 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 5 V, ID = 4.8 A RG = 6.5 Ω Rise time tr 30 45 VDD = 30 V, VGS = 5 V, ID = 4.8 A RG = 6.5 Ω Turn-off delay time td(off) 20 30 VDD = 30 V, VGS = 5 V, ID = 4.8 A RG = 6.5 Ω Fall time tf 40 1.33 20 32.6 2.94 60 nC 2 30 50 V 3 05/Sep/1997 VDD = 30 V, VGS = 5 V, ID = 4.8 A RG = 6.5 Ω Gate charge at threshold Qg(th) Qg(5) - VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V Gate charge at 5.0 V VDD = 40 V, ID = 4.8 A, VGS =0 to 5 V Gate charge total Qg(total) - VDD = 40 V, ID = 4.8 A, VGS =0 to 10 V Gate plateau voltage V(plateau) VDD = 40 V, ID = 28 A Semiconductor Group Preliminary data BUZ.


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