Document
Preliminary data
BUZ 103SL-4
SIPMOS ® Power Transistor
• Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated
Type BUZ 103SL-4
VDS
55 V
ID
4.8 A
RDS(on)
0.055 Ω
Package P-DSO-28
Ordering Code C67078-S. . . .- . .
Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 4.8 Unit A
ID IDpuls
19.2
TA = 25 °C
Pulsed drain current one channel active
TA = 25 °C
Avalanche energy, single pulse
EAS
140 dv/dt 6
mJ
ID = 4.8 A, VDD = 25 V, RGS = 25 Ω L = 12 mH, Tj = 25 °C
Reverse diode dv/dt kV/µs
IS = 4.8 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C
Gate source voltage Power dissipation ,one channel active
VGS Ptot
± 14 2.4
V W
TA = 25 °C
Operating temperature Storage temperature IEC climatic category, DIN IEC 68-1
Tj Tstg
-55 ... + 175 -55 ... + 175 55 / 175 / 56
°C
Semiconductor Group
1
05/Sep/1997
Preliminary data
BUZ 103SL-4
Thermal Characteristics Parameter Symbol min. Thermal resistance, junction - soldering point 1) Thermal resistance, junction - ambient 2) Values typ. tbd 62.5 max. K/W Unit
RthJS RthJA
-
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for Drain connection. PCB is vertical without blown air.
2) one channel active
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
55 1.6 0.1 10 0.0403 2
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
1.2
VGS=VDS, ID = 50 µA
Zero gate voltage drain current
IDSS
0.1 1 100
µA
VDS = 55 V, VGS = 0 V, Tj = -40 °C VDS = 55 V, VGS = 0 V, Tj = 25 °C VDS = 55 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
IGSS
100
nA Ω 0.055
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 5 V, ID = 4.8 A
Semiconductor Group
2
05/Sep/1997
Preliminary data
BUZ 103SL-4
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
tbd 770 230 130 -
S pF 960 290 165 ns 50 75
VDS≥ 2 * ID * RDS(on)max, ID = 0 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 5 V, ID = 4.8 A RG = 6.5 Ω
Rise time
tr
30 45
VDD = 30 V, VGS = 5 V, ID = 4.8 A RG = 6.5 Ω
Turn-off delay time
td(off)
20 30
VDD = 30 V, VGS = 5 V, ID = 4.8 A RG = 6.5 Ω
Fall time
tf
40 1.33 20 32.6 2.94 60 nC 2 30 50 V 3 05/Sep/1997
VDD = 30 V, VGS = 5 V, ID = 4.8 A RG = 6.5 Ω
Gate charge at threshold
Qg(th) Qg(5)
-
VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V
Gate charge at 5.0 V
VDD = 40 V, ID = 4.8 A, VGS =0 to 5 V
Gate charge total
Qg(total)
-
VDD = 40 V, ID = 4.8 A, VGS =0 to 10 V
Gate plateau voltage
V(plateau)
VDD = 40 V, ID = 28 A
Semiconductor Group
Preliminary data
BUZ.