Power Transistor. BUZ104SL Datasheet

BUZ104SL Transistor. Datasheet pdf. Equivalent


Part BUZ104SL
Description Power Transistor
Feature BUZ 104 SL SPP13N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Aval.
Manufacture Siemens Semiconductor Group
Datasheet
Download BUZ104SL Datasheet


BUZ 104 SL SPP13N05L SIPMOS ® Power Transistor • N channel BUZ104SL Datasheet
Preliminary data BUZ 104SL-4 SIPMOS ® Power Transistor • BUZ104SL-4 Datasheet
Recommendation Recommendation Datasheet BUZ104SL Datasheet




BUZ104SL
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Type
BUZ 104 SL
VDS
55 V
ID
12.5 A
RDS(on)
0.12
BUZ 104 SL
SPP13N05L
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
Q67040-S4006-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 12.5 A, VDD = 25 V, RGS = 25
L = 666 µH, Tj = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Reverse diode dv/dt
IS = 12.5 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
IAR
EAR
dv/dt
VGS
Ptot
Values
12.5
8.8
50
52
12.5
3.5
6
± 14
35
Unit
A
mJ
A
mJ
kV/µs
V
W
Semiconductor Group
1
29/Jan/1998



BUZ104SL
Maximum Ratings
Parameter
Operating temperature
Storage temperature
Thermal resistance, junction - case
Thermal resistance, junction - ambient
IEC climatic category, DIN IEC 68-1
BUZ 104 SL
SPP13N05L
Symbol
Tj
Tstg
RthJC
RthJA
Values
-55 ... + 175
-55 ... + 175
4.3
62
55 / 175 / 56
Unit
°C
K/W
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 20 µA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 4.5 V, ID = 8.8 A
VGS = 10 V, ID = 8.8 A
V(BR)DSS
55
VGS(th)
1.2
IDSS
-
-
-
IGSS
-
RDS(on)
-
-
Values
typ.
max.
--
1.6 2
- 0.1
0.1 1
- 100
10 100
0.105
0.062
0.12
0.07
Unit
V
µA
nA
Semiconductor Group
2
29/Jan/1998







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