Power Transistor. BUZ104SL-4 Datasheet

BUZ104SL-4 Transistor. Datasheet pdf. Equivalent


Part BUZ104SL-4
Description Power Transistor
Feature Preliminary data BUZ 104SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic .
Manufacture Siemens Semiconductor Group
Datasheet
Download BUZ104SL-4 Datasheet


Preliminary data BUZ 104SL-4 SIPMOS ® Power Transistor • BUZ104SL-4 Datasheet
Recommendation Recommendation Datasheet BUZ104SL-4 Datasheet




BUZ104SL-4
SIPMOS ® Power Transistor
• Quad-channel
• Enhancement mode
• Logic level
• Avalanche-rated
• dv/dt rated
Preliminary data
BUZ 104SL-4
Type
VDS
BUZ 104SL-4 55 V
ID
3.2 A
RDS(on)
0.125
Package
P-DSO-28
Ordering Code
C67078-S. . . .- . .
Maximum Ratings
Parameter
Continuous drain current one channel active
TA = 25 °C
Pulsed drain current one channel active
TA = 25 °C
Avalanche energy, single pulse
ID = 3.2 A, VDD = 25 V, RGS = 25
L = 10.15 mH, Tj = 25 °C
Reverse diode dv/dt
IS = 3.2 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation ,one channel active
TA = 25 °C
Operating temperature
Storage temperature
IEC climatic category, DIN IEC 68-1
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Ptot
Tj
Tstg
Values
3.2
Unit
A
12.8
mJ
52
kV/µs
6
± 14
2.4
-55 ... + 175
-55 ... + 175
55 / 175 / 56
V
W
°C
Semiconductor Group
1
07/Oct/1997



BUZ104SL-4
Preliminary data
BUZ 104SL-4
Thermal Characteristics
Parameter
Thermal resistance, junction - soldering point 1)
Thermal resistance, junction - ambient 2)
Symbol
Values
Unit
min. typ. max.
RthJS - - tbd K/W
RthJA -
-
62.5
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for
Drain connection. PCB is vertical without blown air.
2) one channel active
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 20 µA
Zero gate voltage drain current
VDS = 55 V, VGS = 0 V, Tj = -40 °C
VDS = 55 V, VGS = 0 V, Tj = 25 °C
VDS = 55 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 5 V, ID = 3.2 A
Symbol
min.
Values
typ. max.
Unit
V(BR)DSS
55
VGS(th)
1.2
IDSS
-
-
-
IGSS
-
RDS(on)
-
V
--
1.6
-
0.1
-
10
0.095
2
0.1
1
100
100
0.125
µA
nA
Semiconductor Group
2
07/Oct/1997







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