Document
BUZ 110 SL
SPP80N05L
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V
ID 80 A
RDS(on) 0.015 Ω
Package
Ordering Code
BUZ 110 SL
TO-220 AB
Q67040-S4004-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 25 °C TC = 100 °C
ID
A 80 59
Pulsed drain current
TC = 25 °C
IDpuls
320
E AS
Avalanche energy, single pulse
ID = 80 A, V DD = 25 V, RGS = 25 Ω L = 144 µH, Tj = 25 °C
mJ
460
IAR E AR
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt
IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C
80 20
A mJ kV/µs
dv/dt
6
V GS P tot
Gate source voltage Power dissipation
TC = 25 °C
± 14
200
V W
Semiconductor Group
1
28/Jan/1998
BUZ 110 SL
SPP80N05L
Maximum Ratings Parameter Symbol Values Unit
Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 175 -55 ... + 175
°C
≤ 0.75 ≤ 62
55 / 175 / 56
K/W
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C
V (BR)DSS
V 55 -
Gate threshold voltage
V GS=V DS, ID = 200 µA
V GS(th)
1.2
IDSS
1.67
2 µA
Zero gate voltage drain current
V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS = 50 V, V GS = 0 V, Tj = 150 °C
IGSS
0.1 -
0.1 1 100 nA
Gate-source leakage current
V GS = 20 V, VDS = 0 V
RDS(on)
10
100
Drain-Source on-resistance
V GS = 4.5 V, ID = 59 A V GS = 10 V, ID = 59 A
Ω
0.012 0.0075 0.015 0.01
Semiconductor Group
2
28/Jan/1998
BUZ 110 SL
SPP80N05L
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit
Dynamic Characteristics
Transconductance
V DS≥ 2 * ID * RDS(on)max, ID = 59 A
gfs
S 30 pF 2600 3250
Input capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
Ciss
Output capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
Coss
Crss
750
940
Reverse transfer capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
td(on)
395
495 ns
Turn-on delay time
V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 2 Ω
tr
20
30
Rise time
V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 2 Ω
td(off)
70
105
Turn-off delay time
V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 2 Ω
tf
45
70
Fall time
V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 2 Ω
Qg(th)
25
40 nC
Gate charge at threshold
V DD = 40 V, ID ≥ 0.1 A, V GS =0 to 1 V
Qg(5)
4
6
Gate charge at 5.0 V
V DD = 40 V, ID = 80 A, VGS =0 to 5 V
Qg(total)
65
100
Gate charge total
V DD = 40 V, ID = 80 A, VGS =0 to 10 V
V (plateau)
110
165 V
Gate plateau voltage
V DD = 40 V, ID = 80 A
-
4.5
-
Semiconductor Group
3
28/Jan/1998
BUZ 110 SL
SPP80N05L
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit
Inverse diode continuous forward current
TC = 25 °C
IS
A 80
Inverse diode direct current,pulsed
TC = 25 °C
ISM
V SD
-
320 V
Inverse diode forward voltage
V GS = 0 V, IF = 160 A
trr
1.2
2 ns
Reverse recovery time
V R = 30 V, IF=lS, diF/dt = 100 A/µs
Qrr
90
135 µC
Reverse recovery charge
V R = 30 V, IF=lS, diF/dt = 100 A/µs
-
0.14
0.21
Semiconductor Group
4
28/Jan/1998
BUZ 110 SL
SPP80N05L
Power dissipation Ptot = ƒ(TC)
Drain current ID = ƒ(TC) parameter: VGS ≥ 4 V
90 A ID 70 60
220 W Ptot 180 160 140 120 100 80 60
50 40 30 20
40 20 0 0 20 40 60 80 100 120 140 °C 180 10 0 0 20 40 60 80 100 120 140 °C 180
TC
TC
Safe operating area ID = ƒ(VDS) parameter: D = 0, TC = 25°C
10 3
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 0
10 2
R
DS (o n)
=
V
ID
/I
D
A
DS
t = 8.7µs p 10 µs
K/W ZthJC
10 -1
100 µs
10 -2 D = 0.50 0.20 10
1 1 ms
0.10 10 -3 0.05 0.02 single pulse 0.01
10 ms
DC
10 0 0 10
10
1
V 10
2
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
VDS
tp
Semiconductor Group
5
28/Jan/1998
BUZ 110 SL
SPP80N05L
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C
180 A ID 140 120
e
VGS [V] f a 2.5 b c d e 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C
0.050
Ptot = 200W
l kj i h g
Ω
0.040 RDS (on) 0.035 0.030 0.025 0.020 0.015 0.010
b a
a
b
c
d
e
100 80 60
c
f g
d h
i j k l
40 20 0
0.005 0.000 V 5.0 0
VGS [V] =
a 2.5 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 6.5 7.0 j 8.0
f g h i j k
k 10.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
20
40
60
80
100
120
A
160
VDS
ID
Typ. transfer characteristics ID = f (V GS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
70
A
I
D
50
40
30
20
10
0 0
1
2
3
4
5
6
7
8
V
VGS
10
Semiconduc.