DatasheetsPDF.com

BUZ110SL Dataheets PDF



Part Number BUZ110SL
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Power Transistor
Datasheet BUZ110SL DatasheetBUZ110SL Datasheet (PDF)

BUZ 110 SL SPP80N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 80 A RDS(on) 0.015 Ω Package Ordering Code BUZ 110 SL TO-220 AB Q67040-S4004-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 80 59 Pulsed drain current TC = 25 °C IDpuls 320 E AS Avalanche energy, single p.

  BUZ110SL   BUZ110SL


Document
BUZ 110 SL SPP80N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 80 A RDS(on) 0.015 Ω Package Ordering Code BUZ 110 SL TO-220 AB Q67040-S4004-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 80 59 Pulsed drain current TC = 25 °C IDpuls 320 E AS Avalanche energy, single pulse ID = 80 A, V DD = 25 V, RGS = 25 Ω L = 144 µH, Tj = 25 °C mJ 460 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 80 20 A mJ kV/µs dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 14 200 V W Semiconductor Group 1 28/Jan/1998 BUZ 110 SL SPP80N05L Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤ 0.75 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 200 µA V GS(th) 1.2 IDSS 1.67 2 µA Zero gate voltage drain current V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS = 50 V, V GS = 0 V, Tj = 150 °C IGSS 0.1 - 0.1 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 4.5 V, ID = 59 A V GS = 10 V, ID = 59 A Ω 0.012 0.0075 0.015 0.01 Semiconductor Group 2 28/Jan/1998 BUZ 110 SL SPP80N05L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Dynamic Characteristics Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 59 A gfs S 30 pF 2600 3250 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 750 940 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 395 495 ns Turn-on delay time V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 2 Ω tr 20 30 Rise time V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 2 Ω td(off) 70 105 Turn-off delay time V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 2 Ω tf 45 70 Fall time V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 2 Ω Qg(th) 25 40 nC Gate charge at threshold V DD = 40 V, ID ≥ 0.1 A, V GS =0 to 1 V Qg(5) 4 6 Gate charge at 5.0 V V DD = 40 V, ID = 80 A, VGS =0 to 5 V Qg(total) 65 100 Gate charge total V DD = 40 V, ID = 80 A, VGS =0 to 10 V V (plateau) 110 165 V Gate plateau voltage V DD = 40 V, ID = 80 A - 4.5 - Semiconductor Group 3 28/Jan/1998 BUZ 110 SL SPP80N05L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 °C IS A 80 Inverse diode direct current,pulsed TC = 25 °C ISM V SD - 320 V Inverse diode forward voltage V GS = 0 V, IF = 160 A trr 1.2 2 ns Reverse recovery time V R = 30 V, IF=lS, diF/dt = 100 A/µs Qrr 90 135 µC Reverse recovery charge V R = 30 V, IF=lS, diF/dt = 100 A/µs - 0.14 0.21 Semiconductor Group 4 28/Jan/1998 BUZ 110 SL SPP80N05L Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 4 V 90 A ID 70 60 220 W Ptot 180 160 140 120 100 80 60 50 40 30 20 40 20 0 0 20 40 60 80 100 120 140 °C 180 10 0 0 20 40 60 80 100 120 140 °C 180 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0, TC = 25°C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 10 2 R DS (o n) = V ID /I D A DS t = 8.7µs p 10 µs K/W ZthJC 10 -1 100 µs 10 -2 D = 0.50 0.20 10 1 1 ms 0.10 10 -3 0.05 0.02 single pulse 0.01 10 ms DC 10 0 0 10 10 1 V 10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 28/Jan/1998 BUZ 110 SL SPP80N05L Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 180 A ID 140 120 e VGS [V] f a 2.5 b c d e 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.050 Ptot = 200W l kj i h g Ω 0.040 RDS (on) 0.035 0.030 0.025 0.020 0.015 0.010 b a a b c d e 100 80 60 c f g d h i j k l 40 20 0 0.005 0.000 V 5.0 0 VGS [V] = a 2.5 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 6.5 7.0 j 8.0 f g h i j k k 10.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20 40 60 80 100 120 A 160 VDS ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 70 A I D 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconduc.


BUZ110S BUZ110SL BUZ111S


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)