BUZ111S

BUZ111S SPP80N05 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated dv /dt rated 175°C operating temperature also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 80 A RDS(on) 0.008 Ω Package Ordering Code BUZ111S TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 100 °C ID A 80 Pulsed drain current TC = 25 °C IDpuls 320 E AS Avalanche energy, single pulse ID = 80 A, V DD = 25 V, RGS = 25 Ω L = 220 µH, Tj = 25 °C mJ 700 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 80 25 A mJ kV/µs dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 20 250 V W Semiconductor Group 1 28/Jan/1998 BUZ111S SPP80N05 Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤ 0.6 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 240 µA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current V DS = 50 V, V GS =...