BUZ20
Semiconductor
Data Sheet
October 1998
File Number 2254.1
12A, 100V, 0.200 Ohm, N-Channel Power MOSFET
Features
12A, 100V
[ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.200Ω (BUZ20 field effect transistor designed for applications such as SOA is Power Dissipation Limited ) switching regulators, switching convert...
