Document
BUZ 215
SIPMOS ® Power Transistor
• N channel • Enhancement mode • FREDFET
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 215
VDS
500 V
ID
5A
RDS(on)
1.5 Ω
Package TO-220 AB
Ordering Code C67078-A1400-A2
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 500 500 Unit V
VDS VDGR ID
RGS = 20 kΩ
Continuous drain current
A 5
TC = 30 °C
Pulsed drain current
IDpuls
20
TC = 25 °C
Gate source voltage Power dissipation
VGS Ptot
± 20 75
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 1.67 75 E 55 / 150 / 56
°C K/W
Semiconductor Group
1
07/96
BUZ 215
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
500 3.5 20 100 10 1.4 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
250 1000
µA
VDS = 500 V, VGS = 0 V, Tj = 25 °C VDS = 500 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 1.5
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 3.2 A
Semiconductor Group
2
07/96
BUZ 215
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
1.7 2.7 1500 110 40 -
S pF 2000 170 70 ns 30 45
VDS≥ 2 * ID * RDS(on)max, ID = 3.2 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Ω
Rise time
tr
40 60
VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Ω
Turn-off delay time
td(off)
110 140
VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Ω
Fall time
tf
50 65
VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Ω
Semiconductor Group
3
07/96
BUZ 215
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1.3 180 0.65 5 20 V 1.6 ns 250 µC 1.2 Values typ. max. Unit
ISM VSD trr Qrr
TC = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = 10 A
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Semiconductor Group
4
07/96
BUZ 215
Power dissipation Ptot = ƒ(TC)
Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V
5.5 A
80
W
Ptot
ID
60
4.5 4.0 3.5 3.0
50
40 2.5 30 2.0 1.5 20 1.0 10 0 0 0.5 0.0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC
TC
Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C
10 2
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 1
K/W A
ID
10 1
t = 630.0ns p
1 µs
ZthJC
10 0
10 µs
DS
/I
D
=V
10 -1
100 µs
DS (o n)
D = 0.50 0.20 0.10
10
0 1 ms
R
10 -2 single pulse
0.05 0.02 0.01
10 ms
10 -1 0 10
DC 10
1
10
2
V 10
3
10 -3 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
VDS
tp
Semiconductor Group
5
07/96
BUZ 215
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs
12 A 10
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS
5.0
Ptot = 75W
l k j i
VGS [V]
a 4.0
Ω
RDS (on) 4.0
3.5 3.0 2.5
a
b
c
d
e
f
ID
9 8
g
h
b 4.5 c 5.0 d 5.5 e 6.0 f 6.5
7 6 5 4 3
d e
f g 7.0
h 7.5 i j 8.0 9.0
g
2.0
h
k 10.0 l 20.0
1.5 1.0 0.5 0.0
VGS [V] =
a 5.0 4.5 4.0 b 5.5 c 6.0 d 6.5 e f 7.0 7.5 g 8.0 h i j 9.0 10.0 20.0
i j
2
c
1 0 0
ab
4
8
12
16
20
24
28
V
34
0
1
2
3
4
5
6
7
8
A
10
VDS
ID
Typ. transfer characteristics ID = f (VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max
6.0 A 5.0
parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max
5.0 S
ID
4.5 4.0 3.5 3.0 2.5 2.0
gfs
4.0 3.5 3.0 2.5 2.0 1.5
1.5 1.0 1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10 0.5 0.0 0.0
1.0
2.0
3.0
4.0
5.0
VGS
A ID
7.0
Semiconductor Group
6
07/96
BUZ 215
Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 3.2 A, VGS = 10 V
4.5
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
Ω
RDS (on) 3.5
3.0 2.5 2.0 1.5 1.0
98% typ
VGS(th)
3.6 3.2 2.8 2.4
2%
98% typ
2.0 1.6 1.2 0.8
0.5 0.0 -60
0.4 0.0 -60 -20 20 60 100 °C 160
-20
20
60
100
°C
160
Tj
Tj
Typ. capacitances
C = f (VDS) parameter:VGS = 0V, f = 1MHz
10 1
Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs
10 2
nF C 10 0
A
IF Ciss
10 1
10 -1
Coss
10 0
Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)
10 -2 0 10 -1 0.0
5
10
15
20
25
30
V VDS
40
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Semiconductor .