BUZ21L

SIPMOS ® Power Transistor BUZ 21L N channel Enhancement mode Avalanche-rated Logic Level Pin 1 Pin 2 Pin 3 G Type D Ordering Code S VDS ID RDS(on) Package BUZ 21 L 100 V 21 A 0.085 Ω TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 21 A TC = 25 ˚C Pulsed drain current IDpuls 84 TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 21 11.5 mJ ID = 21 A, VDD = 25 V, RGS = 25 Ω L = 340 µH, Tj = 25 ˚C Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation 100 VGS ± 20 Class 1 V Ptot 75 W TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 1.67 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 21L Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V(BR)DSS 100 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 1.2 1.6 2 µA 0.1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS VDS = 100 V, VGS = 0 V, Tj = 25 ˚C VDS = 100 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(...