BUZ308

BUZ 308 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 308 VDS 800 V ID 2.6 A RDS(on) 4Ω Package TO-218 AA Ordering Code C67078-S3109-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 2.6 Unit A ID IDpuls 10 TC = 50 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 3 8 mJ ID = 3 A, VDD = 50 V, RGS = 25 Ω L = 66.6 mH, Tj = 25 °C Gate source voltage Power dissipation 320 VGS Ptot ± 20 75 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 1.67 75 E 55 / 150 / 56 °C K/W Semiconductor Group 09/96 BUZ 308 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 800 3 0.1 10 10 3.5 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 800 V, VGS = 0 V, Tj = 25 °C VDS = 800 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 4 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 1.5 A Semiconductor Group 2 09/96 BUZ 308 E...