BUZ311

BUZ 311 SIPMOS ® Power Transistor N channel Enhancement mode Pin 1 G Pin 2 D Pin 3 S Type BUZ 311 VDS 1000 V ID 2.5 A RDS(on) 5Ω Package TO-218 AA Ordering Code C67078-A3102-A2 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 1000 1000 Unit V VDS VDGR ID RGS = 20 kΩ Continuous drain current A 2.5 TC = 25 °C Pulsed drain current IDpuls 10 TC = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 78 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... ...+ 150 °C -55 ... ...+ 150 ≤ 1.6 75 C 55 / 150 / 56 K/W Semiconductor Group 1 07/96 BUZ 311 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 1000 3 20 100 10 4.5 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 250 1000 µA VDS = 1000 V, VGS = 0 V, Tj = 25 °C VDS = 1000 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 5 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 1.5 A Semiconductor Group 2 07/96 BUZ 311 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transcon...