BUZ31L

BUZ 31 L SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Logic Level Pin 1 G Type BUZ 31 L Pin 2 D Pin 3 S VDS 200 V ID 13.5 A RDS(on) 0.2 Ω Package TO-220 AB Ordering Code C67078-S1322-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 13.5 Unit A ID IDpuls 54 TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 13.5 9 mJ ID = 13.5 A, VDD = 50 V, RGS = 25 Ω L = 1.65 mH, Tj = 25 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 200 VGS Vgs Ptot ± 14 ± 20 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 75 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 1.67 75 E 55 / 150 / 56 °C K/W Semiconductor Group 1 07/96 BUZ 31 L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 1.6 0.1 10 10 0.16 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 200 V, VGS = 0 V, Tj = 25 °C VDS = 200 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.2 VGS = 20 V, VDS = 0 V Drain-Source on-resistanc...