BUZ31L

SIPMOS ® Power Transistor BUZ 31L N channel Enhancement mode Avalanche-rated Logic Level Pin 1 Pin 2 Pin 3 G Type D Ordering Code S VDS ID RDS(on) Package BUZ 31 L 200 V 13.5 A 0.2 Ω TO-220 AB C67078-S1322-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 13.5 A TC = 28 ˚C Pulsed drain current IDpuls 54 TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 13.5 9 mJ ID = 13.5 A, VDD = 50 V, RGS = 25 Ω L = 1.65 mH, Tj = 25 ˚C Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation 200 VGS Ptot ± 20 Class 1 V W 95 TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 1.32 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 31L Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V(BR)DSS 200 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 1.2 1.6 2 µA 0.1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current IGSS RDS(on) 0.16 0.2 VGS = 20 V, VDS = 0 V Drain-Source...