BUZ 332 A
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
www.DataSheet4U.com
Pin 1 G
Pin...
BUZ 332 A
SIPMOS ® Power
Transistor
N channel Enhancement mode Avalanche-rated
www.DataSheet4U.com
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 332 A
VDS
600 V
ID
8A
RDS(on)
0.9 Ω
Package TO-218 AA
Ordering Code C67078-S3123-A4
Maximum Ratings Parameter Continuous drain current Symbol Values 8 Unit A
ID IDpuls
32
TC = 33 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
8 13 mJ
ID = 8 A, VDD = 50 V, RGS = 25 Ω L = 16.3 mH, Tj = 25 °C
Gate source voltage Power dissipation 570
VGS Ptot
± 20 150
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 0.83 75 E 55 / 150 / 56
°C K/W
1
07/96
BUZ 332 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static www.DataSheet4U.com Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V(BR)DSS
600 3 0.1 10 10 0.8 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 0.9
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID =...