Document
BUZ 338
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 338
VDS
500 V
ID
13.5 A
RDS(on)
0.4 Ω
Package TO-218 AA
Ordering Code C67078-S3126-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 13.5 Unit A
ID IDpuls
54
TC = 28 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
13.5 18 mJ
ID = 13.5 A, VDD = 50 V, RGS = 25 Ω L = 9.18 mH, Tj = 25 °C
Gate source voltage Power dissipation 930
VGS Ptot
± 20 180
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 0.7 75 E 55 / 150 / 56
°C K/W
1
07/96
BUZ 338
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
500 3 0.1 10 10 0.3 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 500 V, VGS = 0 V, Tj = 25 °C VDS = 500 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 0.4
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 8.5 A
Semiconductor Group
2
07/96
BUZ 338
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
8 15 2500 320 120 -
S pF 3325 480 180 ns 40 60
VDS≥ 2 * ID * RDS(on)max, ID = 8.5 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Ω
Rise time
tr
100 150
VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Ω
Turn-off delay time
td(off)
450 600
VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Ω
Fall time
tf
120 160
VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Ω
Semiconductor Group
3
07/96
BUZ 338
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1.1 400 6.2 13.5 54 V 1.6 ns µC Values typ. max. Unit
ISM VSD trr Qrr
TC = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = 27 A
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Semiconductor Group
4
07/96
BUZ 338
Power dissipation Ptot = ƒ(TC)
Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V
14 A 12
190 W 160
Ptot
140 120 100 80 60 40 20 0 0
ID
11 10 9 8 7 6 5 4 3 2 1 0
20
40
60
80
100
120
°C
160
0
20
40
60
80
100
120
°C
160
TC
TC
Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C
10 2
t = 6.8µs p
10 µs
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 0
A
K/W
ID
/I
D
ZthJC
=V
10 1
DS
100 µs
10 -1
R
DS (o n)
1 ms
D = 0.50 0.20
10 ms
10
0
10
-2
0.10 0.05 0.02
DC
0.01
10 -1 0 10
10
1
10
2
V 10
3
10 -3 -7 10
single pulse 10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
VDS
tp
Semiconductor Group
5
07/96
BUZ 338
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs
30 A 26
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS
1.3
Ptot = 180Wl j
k i hg f
e dVGS [V]
a 4.0 b 4.5 c 5.0
Ω
1.1
a
b
c
ID
24 22 20 18 16 14 12 10 8 6 4
a b c
RDS (on)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
VGS [V] =
a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0
d 5.5 e 6.0 f 6.5
g 7.0 h 7.5 i j 8.0 9.0
d e f g h j i k
k 10.0 l 20.0
2 0 0
4
8
12
16
20
V
28
0
4
8
12
16
20
A
28
VDS
ID
Typ. transfer characteristics ID = f (VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max
15 A 13
parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max
20 S
ID
12 11 10 9 8 7 6 5 4 3 2
gfs
16 14 12 10 8 6 4 2
1 0 0
0 1 2 3 4 5 6 7 8 V 10 0 2 4 6 8 10
VGS
A ID
14
Semiconductor Group
6
07/96
BUZ 338
Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 8.5 A, VGS = 10 V
1.7
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
Ω
RDS (on)
1.4
98%
VGS(th)
3.6 3.2 2.8 2.4
1.2 1.0
typ
2%
0.8 0.6 0.4
2.0
98% typ
1.6 1.2 0.8
0.2 0.0 -60
0.4 0.0 -60 -20 20 60 100 °C 160
-20
20
60
100
°C
160
Tj
Tj
Typ. capacitances
C = f (VDS) parameter:VGS = 0V, f = 1MHz
10 1
Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs
10 2
nF C 10 0
A
Ciss
IF
10 1
Coss
10 -1
Crss
10 0
Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)
10 -2 0 1.