SIPMOS ® Power Transistor
BUZ 341
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type...
SIPMOS ® Power
Transistor
BUZ 341
N channel Enhancement mode Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 341
200 V
33 A
0.07 Ω
TO-218 AA
C67078-S3128-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
ID
33
A
TC = 28 ˚C
Pulsed drain current
IDpuls
132
TC = 25 ˚C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
33 16 mJ
ID = 33 A, VDD = 50 V, RGS = 25 Ω L = 1.09 mH, Tj = 25 ˚C
Gate source voltage Power dissipation 790
VGS Ptot
± 20
170
V W
TC = 25 ˚C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150
˚C
≤ 0.74
75 E 55 / 150 / 56
K/W
Data Sheet
1
05.99
BUZ 341
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol min.
Values typ. max.
Unit
Static Characteristics
Drain- source breakdown voltage
V(BR)DSS
200 -
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C
Gate threshold voltage
VGS(th)
2.1 3 4 µA 0.1 10 1 100 nA 10 100
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C
Gate-source leakage current
IGSS
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
0.06 0.07
Ω
VGS = 10 V, ID = 21 A
Data Sheet
2
05....
