Document
BUZ 344
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 344
VDS
100 V
ID
50 A
RDS(on)
0.035 Ω
Package TO-218 AA
Ordering Code C67078-S3132-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 50 Unit A
ID IDpuls
200
TC = 25 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
50 18.5 mJ
ID = 50 A, VDD = 25 V, RGS = 25 Ω L = 240 µH, Tj = 25 °C
Gate source voltage Power dissipation 400
VGS Ptot
± 20 170
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 0.74 75 E 55 / 150 / 56
°C K/W
1
07/96
BUZ 344
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
100 3 0.1 10 10 0.03 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 0.035
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 32 A
Semiconductor Group
2
07/96
BUZ 344
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
15 28 2400 730 430 -
S pF 3200 1100 650 ns 33 50
VDS≥ 2 * ID * RDS(on)max, ID = 32 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
Rise time
tr
140 210
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
Turn-off delay time
td(off)
500 670
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
Fall time
tf
230 310
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
Semiconductor Group
3
07/96
BUZ 344
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1.6 170 0.9 50 200 V 1.8 ns µC Values typ. max. Unit
ISM VSD trr Qrr
TC = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = 100 A
Reverse recovery time
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Semiconductor Group
4
07/96
BUZ 344
Power dissipation Ptot = ƒ(TC)
Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V
55 A
180 W
Ptot
140 120 100 80 60
ID
45 40 35 30 25 20 15
40 20 0 0
10 5 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC
TC
Safe.