BUZ 384
SIPMOS ® Power Transistor
• N channel • Enhancement mode • FREDFET
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 384
V...
BUZ 384
SIPMOS ® Power
Transistor
N channel Enhancement mode FREDFET
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 384
VDS
500 V
ID
10.5 A
RDS(on)
0.6 Ω
Package TO-218 AA
Ordering Code C67078-A3209-A2
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 500 500 Unit V
VDS VDGR ID
RGS = 20 kΩ
Continuous drain current
A 10.5
TC = 25 °C
Pulsed drain current
IDpuls
42
TC = 25 °C
Gate source voltage Power dissipation
VGS Ptot
± 20 125
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤1 75 E 55 / 150 / 56
°C K/W
Semiconductor Group
1
07/96
BUZ 384
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
500 3.5 20 100 10 0.55 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
250 1000
µA
VDS = 500 V, VGS = 0 V, Tj = 25 °C VDS = 500 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 0.6
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 6.5 A
Semiconductor Group
2
07/96
BUZ 384
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics T...