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Power Transistor. BUZ40 Datasheet

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Power Transistor. BUZ40 Datasheet






BUZ40 Transistor. Datasheet pdf. Equivalent




BUZ40 Transistor. Datasheet pdf. Equivalent





Part

BUZ40

Description

Power Transistor



Feature


BUZ 40 B SIPMOS ® Power Transistor N channel • Enhancement mode • Av alanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 40 B VDS 500 V ID 8.5 A RDS(on) 0.8 Ω Package TO-220 AB Ord ering Code C67078-S1305-A4 Maximum Rat ings Parameter Continuous drain current Symbol Values 8.5 Unit A ID IDpuls 34 TC = 35 °C Pulsed drain current TC = 25 °C Avalanche current,li.
Manufacture

Siemens Semiconductor Group

Datasheet
Download BUZ40 Datasheet


Siemens Semiconductor Group BUZ40

BUZ40; mited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, sin gle pulse IAR EAR EAS 10 13 mJ ID = 10 A, VDD = 50 V, RGS = 25 Ω L = 10.3 mH, Tj = 25 °C Gate source voltage Po wer dissipation 570 VGS Ptot ± 20 15 0 V W TC = 25 °C Operating temperatu re Storage temperature Thermal resistan ce, chip case Thermal resistance, chip to ambient DIN humidity.


Siemens Semiconductor Group BUZ40

category, DIN 40 040 IEC climatic categ ory, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 0.83 75 E 55 / 150 / 56 °C K/W 1 07/96 BUZ 40 B Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol m in. Static Characteristics Drain- sourc e breakdown voltage Values typ. max. Un it V(BR)DSS 500 3 0.1.


Siemens Semiconductor Group BUZ40

10 10 0.6 4 V VGS = 0 V, ID = 0.25 mA , Tj = 25 °C Gate threshold voltage V GS(th) 2.1 VGS=VDS, ID = 1 mA Zero gat e voltage drain current IDSS 1 100 µ A VDS = 500 V, VGS = 0 V, Tj = 25 °C VDS = 500 V, VGS = 0 V, Tj = 125 °C Ga te-source leakage current IGSS 100 nA Ω 0.8 VGS = 20 V, VDS = 0 V Drain-S ource on-resistance RDS(on) VGS = 10 V, ID = 5.5 A Semicondu.

Part

BUZ40

Description

Power Transistor



Feature


BUZ 40 B SIPMOS ® Power Transistor N channel • Enhancement mode • Av alanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 40 B VDS 500 V ID 8.5 A RDS(on) 0.8 Ω Package TO-220 AB Ord ering Code C67078-S1305-A4 Maximum Rat ings Parameter Continuous drain current Symbol Values 8.5 Unit A ID IDpuls 34 TC = 35 °C Pulsed drain current TC = 25 °C Avalanche current,li.
Manufacture

Siemens Semiconductor Group

Datasheet
Download BUZ40 Datasheet




 BUZ40
BUZ 40 B
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 40 B
VDS
500 V
ID
8.5 A
RDS(on)
0.8
Maximum Ratings
Parameter
Continuous drain current
TC = 35 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 10 A, VDD = 50 V, RGS = 25
L = 10.3 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1305-A4
Values
8.5
34
10
13
Unit
A
mJ
570
± 20
150
-55 ... + 150
-55 ... + 150
0.83
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96




 BUZ40
BUZ 40 B
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 500 V, VGS = 0 V, Tj = 25 °C
VDS = 500 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 5.5 A
Symbol
min.
V(BR)DSS
500
VGS(th)
2.1
IDSS
-
-
IGSS
-
RDS(on)
-
Values
typ. max.
Unit
V
--
34
µA
0.1 1
10 100
nA
10 100
0.6 0.8
Semiconductor Group
2
07/96




 BUZ40
BUZ 40 B
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 5.5 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Rise time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Fall time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
5
-
-
-
-
-
-
-
8-
1500 2300
180 270
65 100
20 30
70 110
260 340
80 100
Unit
S
pF
ns
Semiconductor Group
3
07/96



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