BUZ45

BUZ45 Semiconductor Data Sheet October 1998 File Number 2257.1 9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET Features 9.6A, 500V [ /Title IThis is an N-Channel enhancement mode silicon gate rDS(ON) = 0.600Ω (BUZ45) power field effect transistor designed for applications such SOA is Power Dissipation Limited /Subject as switching regulators, switching converters, motor drivers, Nanosecond Switching Speeds (9.6A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 500V, Linear Transfer Characteristics This type can be operated directly from integrated circuits. 0.600 High Input Impedance Ohm, N- Formerly developmental type TA17435. Majority Carrier Device Channel Power Ordering Information Symbol PART NUMBER PACKAGE BRAND MOSD BUZ45 TO-204AA BUZ45 FET) /Author NOTE: When ordering, use the entire part number. G () /KeyS words (Harris Semiconduc- Packaging tor, NJEDEC TO-204AA Channel Power DRAIN MOS(FLANGE) FET. TO204AA) /Creator () SOURCE (PIN 2) /DOCIN GATE (PIN 1) FO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 ...