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BUZ50A Dataheets PDF



Part Number BUZ50A
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Power Transistor
Datasheet BUZ50A DatasheetBUZ50A Datasheet (PDF)

www.DataSheet4U.com BUZ 50 A SIPMOS ® Power Transistor • N channel • Enhancement mode Pin 1 G Pin 2 D Pin 3 S Type BUZ 50 A VDS 1000 V ID 2.5 A RDS(on) 5Ω Package TO-220 AB Ordering Code C67078-A1307-A3 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 1000 1000 Unit V VDS VDGR ID RGS = 20 kΩ Continuous drain current A 2.5 TC = 25 °C Pulsed drain current IDpuls 10 TC = 25 °C m .co Gate source voltage Power dissipation VGS Ptot ± 20 75 V W T.

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www.DataSheet4U.com BUZ 50 A SIPMOS ® Power Transistor • N channel • Enhancement mode Pin 1 G Pin 2 D Pin 3 S Type BUZ 50 A VDS 1000 V ID 2.5 A RDS(on) 5Ω Package TO-220 AB Ordering Code C67078-A1307-A3 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 1000 1000 Unit V VDS VDGR ID RGS = 20 kΩ Continuous drain current A 2.5 TC = 25 °C Pulsed drain current IDpuls 10 TC = 25 °C m .co Gate source voltage Power dissipation VGS Ptot ± 20 75 V W TC = 25 °C 4U Operating temperature eet Tj Tstg RthJC RthJA -55 ... ...+ 150 °C -55 ... ...+ 150 ≤ 1.6 75 E 55 / 150 / 56 K/W Storage temperature Thermal resistance, chip to ambient ww w.D ata DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Sh Thermal resistance, chip case Semiconductor Group 1 07/96 www.DataSheet4U.com BUZ 50 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 1000 3 20 100 10 4.5 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 250 1000 µA VDS = 1000 V, VGS = 0 V, Tj = 25 °C VDS = 1000 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 5 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 1.5 A ww w.D ata Sh eet 4U .co m Semiconductor Group 2 07/96 www.DataSheet4U.com BUZ 50 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.7 1.5 1600 70 30 - S pF 2100 120 55 ns 30 45 VDS≥ 2 * ID * RDS(on)max, ID = 1.5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 2 A RGS = 50 Ω Rise time tr 40 60 VDD = 30 V, VGS = 10 V, ID = 2 A RGS = 50 Ω Turn-off delay time td(off) 110 140 VDD = 30 V, VGS = 10 V, ID = 2 A m RGS = 50 Ω Fall time VDD = 30 V, VGS = 10 V, ID = 2 A ww w.D ata Sh eet 4U RGS = 50 Ω .co tf 60 80 Semiconductor Group 3 07/96 www.DataSheet4U.com BUZ 50 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1.05 2 15 2.5 10 V 1.3 µs µC Values typ. max. Unit ISM VSD trr Qrr TC = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 6 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs ww w.D ata Sh eet 4U .co m Semiconductor Group 4 07/96 www.DataSheet4U.com BUZ 50 A Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 2.6 A 80 W 2.2 Ptot ID 60 2.0 1.8 50 1.6 1.4 40 1.2 1.0 0.8 30 20 0.6 0.4 10 0.2 0 0 0.0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C 10 2 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 ww w.D ata Sh eet 4U .co m A K/W t = 630.0ns p 1 µs 10 µs ID 10 1 ZthJC 10 0 DS / I D 10 0 = V 100 µs 10 -1 D = 0.50 0.20 0.10 DS (o n) R 1 ms 10 ms 10 -1 10 -2 DC single pulse 0.05 0.02 0.01 10 -2 0 10 10 1 10 2 V 10 3 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 www.DataSheet4U.com BUZ 50 A Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 6.0 A l kj i h g VGS [V] a 4.0 b 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 16 a b c d e f Ptot = 75W Ω RDS (on) 12 5.0 ID 4.5 4.0 3.5 e f c d e f g h 10 3.0 2.5 2.0 1.5 c d 8 g h i k j i j k l 6 4 2 VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 1.0 b 0.5 0.0 0 10 20 30 40 a h i j k 8.0 9.0 10.0 20.0 50 V 65 0 0.0 1.0 2.0 3.0 4.0 A 5.5 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 3.0 parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 2.0 ID 2.0 .co A m gfs S 4U Sh eet 1.5 1.0 1.0 0.5 ata 0.5 w.D 0.0 0 1 2 3 4 5 6 7 8 V 10 0.0 0.0 0.5 1.0 1.5 2.0 VGS A ID 3.0 ww Semiconductor Group 6 07/96 www.DataSheet4U.com BUZ 50 A Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 1.5 A, VGS = 10 V 24 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 20 98% RDS (on) VGS(th) 3.6 3.2 18 typ 16 14 12 10 8 6 4 2 0 -60 -20 20 60 100 °C 160 2.8 2.4 2.0 2% 98% typ 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward c.


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