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BUZ 50 A
SIPMOS ® Power Transistor
• N channel • Enhancement mode
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 50 A
VDS
1000 V
ID
2.5 A
RDS(on)
5Ω
Package TO-220 AB
Ordering Code C67078-A1307-A3
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 1000 1000 Unit V
VDS VDGR ID
RGS = 20 kΩ
Continuous drain current
A 2.5
TC = 25 °C
Pulsed drain current
IDpuls
10
TC = 25 °C
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Gate source voltage Power dissipation
VGS Ptot
± 20 75
V W
TC = 25 °C
4U
Operating temperature
eet
Tj Tstg RthJC RthJA
-55 ... ...+ 150 °C -55 ... ...+ 150 ≤ 1.6 75 E 55 / 150 / 56 K/W
Storage temperature Thermal resistance, chip to ambient
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DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
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Thermal resistance, chip case
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07/96
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BUZ 50 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
1000 3 20 100 10 4.5 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
250 1000
µA
VDS = 1000 V, VGS = 0 V, Tj = 25 °C VDS = 1000 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 5
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 1.5 A
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BUZ 50 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
0.7 1.5 1600 70 30 -
S pF 2100 120 55 ns 30 45
VDS≥ 2 * ID * RDS(on)max, ID = 1.5 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 2 A RGS = 50 Ω
Rise time
tr
40 60
VDD = 30 V, VGS = 10 V, ID = 2 A RGS = 50 Ω
Turn-off delay time
td(off)
110 140
VDD = 30 V, VGS = 10 V, ID = 2 A
m
RGS = 50 Ω
Fall time
VDD = 30 V, VGS = 10 V, ID = 2 A
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RGS = 50 Ω
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60 80
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BUZ 50 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1.05 2 15 2.5 10 V 1.3 µs µC Values typ. max. Unit
ISM VSD trr Qrr
TC = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = 6 A
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/µs
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BUZ 50 A
Power dissipation Ptot = ƒ(TC)
Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V
2.6 A
80
W
2.2
Ptot
ID
60
2.0 1.8
50
1.6 1.4
40
1.2 1.0 0.8
30
20
0.6 0.4
10 0.2 0 0 0.0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC
TC
Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C
10 2
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 1
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A
K/W
t = 630.0ns p
1 µs 10 µs
ID
10 1
ZthJC
10 0
DS
/
I
D
10
0
=
V
100 µs
10 -1 D = 0.50 0.20 0.10
DS (o n)
R
1 ms
10 ms
10 -1
10 -2 DC single pulse
0.05 0.02 0.01
10 -2 0 10
10
1
10
2
V 10
3
10 -3 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
VDS
tp
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BUZ 50 A
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs
6.0 A
l kj i h g
VGS [V] a 4.0
b 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS
16
a b c d e f
Ptot = 75W
Ω
RDS (on)
12
5.0
ID
4.5 4.0 3.5
e f
c d e f g h
10
3.0 2.5 2.0 1.5
c d
8
g h i k j
i j k l
6
4 2 VGS [V] =
a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5
1.0
b
0.5 0.0 0 10 20 30 40
a
h i j k 8.0 9.0 10.0 20.0
50
V
65
0 0.0
1.0
2.0
3.0
4.0
A
5.5
VDS
ID
Typ. transfer characteristics ID = f (VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max
3.0
parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max
2.0
ID
2.0
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gfs
S
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1.5
1.0
1.0
0.5
ata
0.5
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0.0 0 1 2 3 4 5 6 7 8 V 10
0.0 0.0
0.5
1.0
1.5
2.0
VGS
A ID
3.0
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BUZ 50 A
Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 1.5 A, VGS = 10 V
24
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
Ω
20
98%
RDS (on)
VGS(th)
3.6 3.2
18
typ
16 14 12 10 8 6 4 2 0 -60 -20 20 60 100 °C 160 2.8 2.4 2.0
2%
98% typ
1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 °C 160
Tj
Tj
Typ. capacitances
C = f (VDS) parameter:VGS = 0V, f = 1MHz
10 1
Forward c.