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BUZ 50 C
SIPMOS ® Power Transistor
• N channel • Enhancement mode
Pin 1 G
Pin 2 D
Pin 3 S
Typ...
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BUZ 50 C
SIPMOS ® Power
Transistor
N channel Enhancement mode
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 50 C
VDS
1000 V
ID
2.3 A
RDS(on)
6Ω
Package TO-220 AB
Ordering Code C67078-A1307-A5
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 1000 1000 Unit V
VDS VDGR ID
RGS = 20 kΩ
Continuous drain current
A 2.3
TC = 25 °C
Pulsed drain current
IDpuls
9
TC = 25 °C
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Gate source voltage Power dissipation
VGS Ptot
± 20 78
V W
TC = 25 °C
4U
Operating temperature
eet
Tj Tstg RthJC RthJA
-55 ... ...+ 150 °C -55 ... ...+ 150 ≤ 1.6 75 C 55 / 150 / 56 K/W
Storage temperature Thermal resistance, chip to ambient
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DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
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Thermal resistance, chip case
Semiconductor Group
1
07/96
www.DataSheet4U.com
BUZ 50 C
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
1000 3 20 100 10 5 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
250 1000
µA
VDS = 1000 V, VGS = 0 V, Tj = 25 °C VDS = 1000 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 6
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 1.5 A
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Semiconductor Group
2
07/96
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