Document
BUZ 61 A
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS 400 V
ID 11 A
RDS(on) 0.5 Ω
Package
Ordering Code
BUZ 61 A
TO-220 AB
C67078-S1341-A3
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 27 °C
ID
A 11
Pulsed drain current
TC = 25 °C
IDpuls
44
IAR E AR E AS
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
ID = 12.5 A, VDD = 50 V, RGS = 25 Ω L = 6.38 mH, Tj = 25 °C
12.5 13 mJ
570
V GS P tot
Gate source voltage Power dissipation
TC = 25 °C
± 20
150
V W
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150
°C
≤ 0.83
75 E 55 / 150 / 56
K/W
Semiconductor Group
1
07/96
BUZ 61 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol min.
Values typ. max.
Unit
Static Characteristics
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C
V (BR)DSS
V 400 -
Gate threshold voltage
V GS=V DS, ID = 1 mA
V GS(th)
2.1
IDSS
3
4 µA
Zero gate voltage drain current
V DS = 400 V, V GS = 0 V, Tj = 25 °C V DS = 400 V, V GS = 0 V, Tj = 125 °C
IGSS
0.1 10
1 100 nA
Gate-source leakage current
V GS = 20 V, VDS = 0 V
RDS(on)
10
100
Drain-Source on-resistance
V GS = 10 V, ID = 8 A
Ω
0.4 0.5
Semiconductor Group
2
07/96
BUZ 61 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit
Transconductance
V DS≥ 2 * ID * RDS(on)max, ID = 8 A
gfs
S 5 11.5 pF 1500 2250
Input capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
Ciss
Output capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
Coss
Crss
210
315
Reverse transfer capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
td(on)
75
110 ns
Turn-on delay time
V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
tr
20
30
Rise time
V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
td(off)
65
100
Turn-off delay time
V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
tf
260
340
Fall time
V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
-
75
100
Semiconductor Group
3
07/96
BUZ 61 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit
Inverse diode continuous forward current
TC = 25 °C
IS
A 11
Inverse diode direct current,pulsed
TC = 25 °C
ISM
V SD
-
44 V
Inverse diode forward voltage
V GS = 0 V, IF = 25 A
trr
1.1
1.4 ns
Reverse recovery time
V R = 100 V, IF=lS, diF/dt = 100 A/µs
Qrr
280
µC
Reverse recovery charge
V R = 100 V, IF=lS, diF/dt = 100 A/µs
-
3
-
Semiconductor Group
4
07/96
BUZ 61 A
Power dissipation Ptot = ƒ(TC)
Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V
12 A
160
W Ptot ID 120
10 9 8
100
7 6 5
80
60
4 3 2
40
20 0 .