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BUZ61A Dataheets PDF



Part Number BUZ61A
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Power Transistor
Datasheet BUZ61A DatasheetBUZ61A Datasheet (PDF)

BUZ 61 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 400 V ID 11 A RDS(on) 0.5 Ω Package Ordering Code BUZ 61 A TO-220 AB C67078-S1341-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 27 °C ID A 11 Pulsed drain current TC = 25 °C IDpuls 44 IAR E AR E AS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 12.5 A, VDD = .

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BUZ 61 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 400 V ID 11 A RDS(on) 0.5 Ω Package Ordering Code BUZ 61 A TO-220 AB C67078-S1341-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 27 °C ID A 11 Pulsed drain current TC = 25 °C IDpuls 44 IAR E AR E AS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 12.5 A, VDD = 50 V, RGS = 25 Ω L = 6.38 mH, Tj = 25 °C 12.5 13 mJ 570 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 20 150 V W Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 °C ≤ 0.83 75 E 55 / 150 / 56 K/W Semiconductor Group 1 07/96 BUZ 61 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 400 - Gate threshold voltage V GS=V DS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current V DS = 400 V, V GS = 0 V, Tj = 25 °C V DS = 400 V, V GS = 0 V, Tj = 125 °C IGSS 0.1 10 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 10 V, ID = 8 A Ω 0.4 0.5 Semiconductor Group 2 07/96 BUZ 61 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 8 A gfs S 5 11.5 pF 1500 2250 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 210 315 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 75 110 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tr 20 30 Rise time V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(off) 65 100 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tf 260 340 Fall time V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω - 75 100 Semiconductor Group 3 07/96 BUZ 61 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 °C IS A 11 Inverse diode direct current,pulsed TC = 25 °C ISM V SD - 44 V Inverse diode forward voltage V GS = 0 V, IF = 25 A trr 1.1 1.4 ns Reverse recovery time V R = 100 V, IF=lS, diF/dt = 100 A/µs Qrr 280 µC Reverse recovery charge V R = 100 V, IF=lS, diF/dt = 100 A/µs - 3 - Semiconductor Group 4 07/96 BUZ 61 A Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 12 A 160 W Ptot ID 120 10 9 8 100 7 6 5 80 60 4 3 2 40 20 0 .


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