BUZ71

BUZ71 Data Sheet June 1999 File Number 2418.2 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA9770. Features 14A, 50V rDS(ON) = 0.100Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER BUZ71 PACKAGE TO-220AB BRAND BUZ71 NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 11 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 BUZ71 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ71 50 50 14 56 ±20 40 0.32 100 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W W/oC mJ oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . ....