BUZ72A
Data Sheet June 1999 File Number 2262.2
9A, 100V, 0.250 Ohm, N-Channel Power MOSFET
This is an N-Channel enhance...
BUZ72A
Data Sheet June 1999 File Number 2262.2
9A, 100V, 0.250 Ohm, N-Channel Power MOSFET
This is an N-Channel enhancement mode silicon gate power field effect
transistor designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA17401.
Features
9A, 100V rDS(ON) = 0.250Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER BUZ72A PACKAGE TO-220AB BRAND BUZ72A
NOTE: When ordering, use the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
DRAIN (FLANGE)
4-23
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
BUZ72A
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified BUZ72A 100 100 9 36 ±20 40 0.32 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W W/oC oC
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . ....