Document
BUZ 73 L
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level
Pin 1 G Type BUZ 73 L
Pin 2 D
Pin 3 S
VDS
200 V
ID
7A
RDS(on)
0.4 Ω
Package TO-220 AB
Ordering Code C67078-S1328-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 7 Unit A
ID IDpuls
28
TC = 28 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
7 6.5 mJ
ID = 7 A, VDD = 50 V, RGS = 25 Ω L = 3.67 mH, Tj = 25 °C
Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 120
VGS Vgs Ptot
± 14 ± 20
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
40
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 3.1 75 E 55 / 150 / 56
°C K/W
Semiconductor Group
1
07/96
BUZ 73 L
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
200 1.6 0.1 10 10 0.3 2
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
1.2
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 200 V, VGS = 0 V, Tj = 25 °C VDS = 200 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 0.4
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 5 V, ID = 3.5 A
Semiconductor Group
2
07/96
BUZ 73 L
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
5 6.5 630 120 60 -
S pF 840 200 90 ns 15 20
VDS≥ 2 * ID * RDS(on)max, ID = 3.5 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω
Rise time
tr
60 90
VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω
Turn-off delay time
td(off)
100 130
VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω
Fall time
tf
40 50
VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω
Semiconductor Group
3
07/96
BUZ 73 L
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1.1 140 0.7 7 28 V 1.7 ns µC Values typ. max. Unit
ISM VSD trr Qrr
TC = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = 14 A
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Semiconductor Group
4
07/96
BUZ 73 L
Power dissipation Ptot = ƒ(TC)
Drain current ID = ƒ(TC) parameter: VGS ≥ 5 V
7.5 A
45 W
6.5
Ptot
35 30 25 20 15 10 5 0 0
ID
6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0
20
40
60
80
100
120
°C
160
0
20
40
60
80
100
120
°C
160
TC
TC
Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C
10 2
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 1
K/W A
/I
D
t = 15.0µs p
ID
10 1
=V
ZthJC
100 µs
10 0
R
DS (o n)
DS
1 ms
10 -1 D = 0.50 0.20
10
0 10 ms
0.10 10 -2 0.05 0.02 single pulse DC 0.01
10
-1
10
0
10
1
10
2
V
10 -3 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
VDS
tp
Semiconductor Group
5
07/96
BUZ 73 L
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs
16
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS
1.3
Ptot = 40W
li gf e kj h
VGS [V] a 2.0
Ω
1.1
a
b
c
A
ID
12
RDS (on)
d
b c
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
VGS [V] =
a 2.0 2.5 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 5.5 h i 6.0 7.0 j 8.0 k 10.0
10
d e f
8
c
g h i j k
6
4
b
l
d f e hj kig
2 0 0
a
0.0 V 12 0 2 4 6 8 10 A 13
2
4
6
8
VDS
ID
Typ. transfer characteristics ID = f (VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max
18 A
parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max
12 S 10
ID
14 12 10 8 6 4 2 0 0
gfs
9 8 7 6 5 4 3 2 1 0
1
2
3
4
5
6
7
8
V
10
0
2
4
6
8
10
12
VGS
A ID
15
Semiconductor Group
6
07/96
BUZ 73 L
Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 3.5 A, VGS = 5 V
1.3
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
Ω
1.1
RDS (on)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 -20 20 60 100 °C 160
VGS(th)
3.6 3.2 2.8 2.4
98% 98% typ
2.0
typ
1.6
2%
1.2 0.8 0.4 0.0 -60 -20 20 60 100 °C 160
Tj
Tj
Typ. capacitances
C = f (VDS) parameter:VGS = 0V, f = 1MHz
10 4
Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs
10 2
pF C 10 3
A
IF
10 1
Ciss
10 2
Coss Crss
10 0
Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 .